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Gate bias instability in hydrogenated polycrystalline silicon thin-film transistors

Dimitriadis, C. A.

Journal of applied physics. VOL 88; PART 6, ; 2000, 3624-3628 -- AMERICAN INSTITUTE OF PHYSICS (pages 3624-3628) -- 2000

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Grain boundary trap distribution in polycrystalline silicon thin-film transistors

Dimitriadis, C. A.

Journal of applied physics. VOL 73; NUMBER 8, ; 1993, 4086 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 8; -- 1993

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Grain Boundary Potential Barrier Inhomogeneities in Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon Thin-Film Transistors

Dimitriadis, C. A.

IEEE transactions on electron devices. VOL 44; NUMBER 9, ; 1997, 1563-1564 -- IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS Part: Part 9; (pages 1563-1564) -- 1997

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Subthreshold slope in polycrystalline silicon thin-film transistors and effect of the gate oxide on the subthreshold characteristics

Dimitriadis, C. A.

Applied physics letters. VOL 67; NUMBER 25, ; 1995, 3738-3740 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 25; (pages 3738-3740) -- 1995

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Comments on "A Scanning Electron- or Light-Beam-Induced Current Method for Determination of Grain Boundary Recombination Velocity in Polycrystalline Semiconductors" with Reply

Donolato, C.; Dimitriadis, C. A.

IEEE transactions on electron devices. VOL 40; NUMBER 6, ; 1993, 1190 -- IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS Part: Part 6; -- 1993

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Performance Enhancement of Offset Gated Polysilicon Thin-Film Transistors

Dimitriadis, C. A. Miyasaka, M.

IEEE Electron device letters. VOL 21; PART 12, ; 2000, 584-586 -- IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS (pages 584-586) -- 2000

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Characteristic Degradation of Poly-Si Thin-Film Transistors With Large Grains From the Viewpoint of Grain Boundary Location

Kimura, M.; Dimitriadis, C. A.

IEEE transactions on electron devices. VOL 58; NUMBER 6, ; 2011, 1748-1751 -- IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS -- 2011

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On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors

Dimitriadis, C. A.; Tassis, D. H.

Journal of applied physics. VOL 79; NUMBER 8//1, ; 1996, 4431-4437 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 8//1; (pages 4431-4437) -- 1996

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Leakage current of offset gate p- and n-channel excimer laser annealed polycrystalline silicon thin-film transistors

Dimitriadis, C. A. Kamarinos, G. Brini, J.

Solid-state electronics. VOL 45; NUMBER 2, ; 2001, 365-368 -- PERGAMON PRESS (pages 365-368) -- 2001

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ELECTRICAL AND NOISE PROPERTIES OF THIN-FILM TRANSISTORS ON VERY THIN EXCIMER LASER ANNEALED POLYCRYSTALLINE SILICON FILMS

Dimitriadis, C. A.; Stoemenos, J.; Kamarinos, G.

INTERNATIONAL SEMICONDUCTOR CONFERENCE.; International semiconductor conference; Sinaia, Romania, 1999; Oct, 1999, 173-178 -- IEEE; 1999 (pages 173-178) -- 1999

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