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Generation-recombination dynamics via acoustic phonons in a disordered graphene

Vasko, F.T.; Mitin, V.V.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 181-183 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 181-183) -- 2011

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Restructuring of the phonon spectra of the MCT and MZT alloy at the dirac point singularity

Cebulski, J.; Sheregii, E.M.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 72-76 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 72-76) -- 2011

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InGaAs/InAlAs double quantum wells as starting structures for quantum logic gates

Marchewka, M.; Sheregii, E.M.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 174-177 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 174-177) -- 2011

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10
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Synchronized mid-infrared beam characterization of narrow gap semiconductors

Olafsen, L.J.; Eaves, I.K.; Olafsen, J.S.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 88-90 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 88-90) -- 2011

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Calculation of PbTe transport coefficients in three-band structures

Tkacheva, E.S.; Dmitriev, A.V.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 126-130 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 126-130) -- 2011

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12
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A history of narrow gap semiconductors and systems: From graphite to graphene

McCombe, B.D.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 9-13 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 9-13) -- 2011

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Effect of electron-electron interaction on surface transport in three dimensional topological insulators

Pal, H.K.; Yudson, V.I.; Maslov, D.L.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 23-25 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 23-25) -- 2011

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14
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Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz spectroscopy

Takeuchi, H.; Tsuruta, S.; Nakayama, M.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 84-87 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 84-87) -- 2011

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15
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Probing spin-relaxation anisotropy in 1D InSb wires by weak anti-localization

Jayathilaka, P.A.R.D. et al.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 95-99 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 95-99) -- 2011

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Dependence of the spin coherence length on wire width for quasi-1-dimensional InSb and InAs wires and Bi wire surface states

Rudolph, M. et al.

AIP conference proceedings.; 15th International Conference on Narrow Gap Systems (NGS15): Blacksburg, VA, USA, 1-5 August 2011 /; Blacksburg, VA, 2011; Aug, 2011, 171-173 -- Melville, N.Y.; American Institute of Physics; 2011 Part: Part; (pages 171-173) -- 2011

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  1. Santos, M.B.
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