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Silicon Strip Detectors for the ATLAS HL-LHC Upgrade

Affolder, A.; ATLAS Collaboration; Liu, T.

Physics procedia VOL 37, ; 2012, 915-922 -- ELSEVIER SCIENCE B. V. AMSTERDAM Part; (pages 915-922) -- 2012

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8
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Charge Collection Efficiency Measurements of Heavily Irradiated Segmented n-in-p and p-in-n Silicon Detectors for Use at the Super-LHC

Affolder, A.; Allport, P.; Casse, G.

IEEE transactions on nuclear science.; Radiation measurements and applications; Berkeley, CA, 2008; Jun, 2009, 765-770 -- IEEE; 2009 Part 3; (pages 765-770) -- 2009

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9
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Collected charge of planar silicon detectors after pion and proton irradiations up to 2.2 ×1016neqcm-2

Affolder, A.; Allport, P.; Casse, G.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 623; NUMBER 1, ; 2010, 177-179 -- Elsevier Science B.V., Amsterdam. (pages 177-179) -- 2010

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10
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Charge Collection Efficiency Measurements of Heavily Irradiated Segmented n-in-p and p-in-n Silicon Detectors for Use at the Super-LHC

Affolder, A.; Allport, P.; Casse, G.

IEEE transactions on nuclear science. VOL 56; NUMB 3; PART 2, ; 2009, 765-770 -- IEEE; 1999 Part 3; (pages 765-770) -- 2009

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11
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Studies of charge collection efficiencies of planar silicon detectors after doses up to Formula Not Shown and the effect of varying diode configurations and substrate types

Affolder, A.; Allport, P.; Casse, G.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 604; NUMBER 1-2, ; 2009, 250-253 -- Elsevier Science B.V., Amsterdam. Part 1-2; (pages 250-253) -- 2009

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12
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LHCb VErtex LOcator (VELO): Module production and performance

Affolder, A. A.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment.; International conference on large scale applications and radiation hardness of semiconductor detectors; Florence, Italy, 2007; Jun, 2008, 25-28 -- Elsevier; 2008 (pages 25-28) -- 2008

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13
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Comment on "Optical Characterization of Si~1~-~xC~x/Si (0 ó x ó 0.014) Semiconductor Alloys"

Zollner, S. et al.

Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers. VOL 35; NUMBER 11; ISSUE 450, ; 1996, 5684-5685 -- JAPANESE JOURNAL OF APPLIED PHYSICS Part: Part 11; (pages 5684-5685) -- 1996

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14
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Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to 2 x 10^1^6 n~e~q cm^-^2

Casse, G. et al.

IEEE transactions on nuclear science. VOL 56; NUMB 2; PART 2, ; 2009, 3752-3758 -- IEEE; 1999 Part: 2; (pages 3752-3758) -- 2009

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15
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Effects of Varying Substrate Thickness on the Collected Charge From Highly Irradiated Planar Silicon Detectors

Affolder, A. et al.

IEEE transactions on nuclear science. VOL 58; NUMBER 6, ; 2011, 3384-3391 -- IEEE; 1999 Part: Part 6; (pages 3384-3391) -- 2011

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16
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Study of the response to minimum ionising particles of microstrip detectors made with float zone and magnetic Czochralski silicon after neutron irradiation

Casse, G. et al.

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment. VOL 598; NUMBER 3, ; 2009, 671-674 -- Elsevier Science B.V., Amsterdam. (pages 671-674) -- 2009

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