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Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers

Abe, Y. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 1281-1284 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 1281-1284) -- 2009

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Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Wutimakun, P. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 521-524 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 521-524) -- 2009

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Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process

Kang, I.H. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 959-962 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 959-962) -- 2009

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The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC

Steeds, J.W.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 433-436 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 433-436) -- 2009

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Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Hishiki, S. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 703-706 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 703-706) -- 2009

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Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

Iwamoto, N. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 1043-1046 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 1043-1046) -- 2009

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Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion

Walden, G.G. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 1139-1142 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 1139-1142) -- 2009

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Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

An, J.H. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 831-834 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 831-834) -- 2009

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Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

Sugie, R. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 353-356 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 353-356) -- 2009

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Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer

Chen, J. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 39-42 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 39-42) -- 2009

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