skip to main content
Show Results with:

Results 1 - 10 of 159  for Everything in this catalogue

results 1 2 3 4 5 next page
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Material Type:
Article
Add to My workspace

Defects in epitaxial SiGe-alloy layers

Nylandsted Larsen, A.

Materials science and engineering. B, Solid-state materials for advanced technology. VOL 71; NUMBER 1-3, ; 2000, 6 - 13 -- Elsevier; 1999 -- 2000

Check library holdings

2
Material Type:
Article
Add to My workspace

Defects in SiGe

Nylandsted Larsen, A.

Materials science forum. VOL 258/263; NUMBER 1, ; 1997, 83-90 -- TRANS TECH PUBLICATIONS LTD Part: Part 1; (pages 83-90) -- 1997

Check library holdings

3
Material Type:
Article
Add to My workspace

Epitaxial growth of Ge and SiGe on Si substrates

Nylandsted Larsen, A.

Materials science in semiconductor processing. VOL 9; NUMBER 4-5, ; 2006, 454-459 -- Elsevier Science B.V., Amsterdam. (pages 454-459) -- 2006

Online access

4
Material Type:
Article
Add to My workspace

Epitaxial growth of Ge and SiGe on Si substrates

Nylandsted Larsen, A.; Claeys, C.

Materials science in semiconductor processing.; Germanium based semiconductors from materials to devices; Nice, France, 2006; May, 2006, 454-459 -- Elsevier; 2006 (pages 454-459) -- 2006

Check library holdings

5
Material Type:
Article
Add to My workspace

Defects in epitaxial SiGe-alloy layers

Nylandsted Larsen, A.; Weber, J.

Materials science and engineering. B, Solid-state materials for advanced technology.; Process induced defects in semiconductors; Strasbourg, France, 1999; Jun, 2000, 6-13 -- Elsevier; 2000 (pages 6-13) -- 2000

Check library holdings

6
Material Type:
Article
Add to My workspace

Capacitance-transient spectroscopy on irradiation-induced defects in Ge

Nylandsted Larsen, A.; Mesli, A.

Optica applicata. VOL 36; PART 2/3, ; 2006, 245-256 -- SPIE - THE INT SOC FOR OPTICAL ENGINEERING Part: Part 2/3; (pages 245-256) -- 2006

Check library holdings

7
Material Type:
Article
Add to My workspace

Irradiation induced defects in Si1-xGex: The effect of alloying

Mesli, A.; Nylandsted Larsen, A.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms. VOL 211; NUMBER 1, ; 2003, 80-90 -- Elsevier Science B.V., Amsterdam. (pages 80-90) -- 2003

Online access

8
Material Type:
Article
Add to My workspace

Substitutional gold in Si~1~-~xGe~x

Nikolajsen, F.; Kringhoej, P.; Nylandsted Larsen, A.

Applied physics letters. VOL 69; NUMBER 12, ; 1996, 1743-1745 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 12; (pages 1743-1745) -- 1996

Check library holdings

9
Material Type:
Article
Add to My workspace

Evidence for vacancy percolation in highly-doped silicon

Mueller, E.; Nylandsted Larsen, A.; Weyer, G.

Hyperfine interactions. VOL 93; NUMBER 1//4, ; 1994, 1395 -- J C BALTZER AG Part: Part 1//4; -- 1994

Check library holdings

10
Material Type:
Article
Add to My workspace

The Meyer-Neldel rule for diffusion in Si and SiGe

Zangenberg, N. R.; Nylandsted Larsen, A.

Physica. B, Condensed matter. VOL 340-342; NUMBER, ; 2003, 780-783 -- Elsevier Science B.V., Amsterdam. (pages 780-783) -- 2003

Online access

Results 1 - 10 of 159  for Everything in this catalogue

results 1 2 3 4 5 next page

Refine Search Results

Refine my results

Access Options 

  1. Purchase a copy  (143)
  2. Request to Reading Room  (110)
  3. Online: Reading Room only  (60)
  4. Online  (1)
  5. Refine further open sub menu

Material type 

  1. Articles  (155)
  2. Books  (4)
  3. Refine further open sub menu

Creation date 

From To
  1. Before1997  (29)
  2. 1997To2001  (50)
  3. 2002To2006  (32)
  4. 2007To2013  (22)
  5. After 2013  (26)
  6. Refine further open sub menu

Additional Features 

  1. Abstract  (70)
  2. No Abstract  (85)
  3. Refine further open sub menu

Searching Remote Databases, Please Wait