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Influence of active nitrogen species on surface and optical properties of epitaxial GaN films

Aggarwal, Neha et al.

Journal of alloys and compounds. Volume 661 (2016); pp 461-465

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Influence of metallic surface states on electron affinity of epitaxial AlN films

Mishra, Monu et al.

Applied surface science. Volume 407 (2017); pp 255-259 -- Elsevier Science

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Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure

Mishra, Monu et al.

Journal of alloys and compounds. Volume 708 (2017); pp 385-391

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Ultrafast photoresponse and enhanced photoresponsivity of Indium Nitride based broad band photodetector

Krishna, Shibin et al.

SOLAR ENERGY MATERIALS AND SOLAR CELLS. Volume 172 (2017); pp 376-383

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Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Gundimeda, Abhiram et al.

Applied Physics Letters. Volume 110:Issue 10 (2017) -- American Institute of Physics

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Impact on photon-assisted charge carrier transport by engineering electrodes of GaN based UV photodetectors

Aggarwal, Neha et al.

Journal of alloys and compounds. Volume 785: (2019, May 15th); pp 883-890

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Erratum: "Fabrication of non-polar GaN based highly responsive and fast UV photodetector" [Appl. Phys. Lett. 110, 103507 (2017)]

Gundimeda, Abhiram et al.

Applied Physics Letters. Volume 111:Issue 1 (2017) -- American Institute of Physics

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Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11–20) Al2O3 substrate

Krishna, Shibin et al.

Journal of alloys and compounds. Volume 658 (2016); pp 470-475

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Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films

Mishra, Monu et al.

Physical chemistry chemical physics. Volume 19:Issue 13 (2017); pp 8787-8801 -- Royal Society of Chemistry

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Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11–20) Al2O3 substrate

Krishna, Shibin et al.

Journal of alloys and compounds. Volume 658 (2016); pp 470-475

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