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In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD

Van Mil, B. L. et al.

Materials science forum.; Silicon carbide and related materials; Newcastle uon Tyne, 2006; Sep, 2007, 125-128 -- Stafa-Zurich; Trans Tech Publications; 2007 (pages 125-128) -- 2007

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Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

Hori, T. et al.

Materials science forum.; Silicon carbide and related materials; Newcastle uon Tyne, 2006; Sep, 2007, 129-132 -- Stafa-Zurich; Trans Tech Publications; 2007 (pages 129-132) -- 2007

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High Quality Uniform SiC Epitaxy for Power Device Applications

Zhang, J. et al.

Materials science forum.; Silicon carbide and related materials; Newcastle uon Tyne, 2006; Sep, 2007, 101-104 -- Stafa-Zurich; Trans Tech Publications; 2007 (pages 101-104) -- 2007

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Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

Huh, S. W. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Pittsburgh, Pa., 2005; Sep, 2006, 493-496 -- Stafa-Zuerich; United Kingdom; Trans Tech Publications; 2006 (pages 493-496) -- 2006

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Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates

Jenny, J. R. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Pittsburgh, Pa., 2005; Sep, 2006, 31-34 -- Stafa-Zuerich; United Kingdom; Trans Tech Publications; 2006 (pages 31-34) -- 2006

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Ab Initio Studies of the Surface Reaction of Si~2C and SiC~2 with Si on the 4H-SiC (000-1) Surface

Yamaguchi, H. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Pittsburgh, Pa., 2005; Sep, 2006, 235-238 -- Stafa-Zuerich; United Kingdom; Trans Tech Publications; 2006 (pages 235-238) -- 2006

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Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor

Seong, H. K. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Pittsburgh, Pa., 2005; Sep, 2006, 771-774 -- Stafa-Zuerich; United Kingdom; Trans Tech Publications; 2006 (pages 771-774) -- 2006

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Evaluation of Schottky Barrier Height of Al, Ti, Au, and Ni Contacts to 3C-SiC

Satoh, M.; Matsuo, H.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Pittsburgh, Pa., 2005; Sep, 2006, 923-926 -- Stafa-Zuerich; United Kingdom; Trans Tech Publications; 2006 (pages 923-926) -- 2006

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Ion Implanted p^+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

Bergamini, F. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Pittsburgh, Pa., 2005; Sep, 2006, 819-822 -- Stafa-Zuerich; United Kingdom; Trans Tech Publications; 2006 (pages 819-822) -- 2006

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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power Devices

Sumakeris, J. J. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Pittsburgh, Pa., 2005; Sep, 2006, 141-146 -- Stafa-Zuerich; United Kingdom; Trans Tech Publications; 2006 (pages 141-146) -- 2006

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  1. Nakashima, S.
  2. Camassel, J.
  3. Madar, R.
  4. Yoshida, S
  5. Wright, N

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