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A 77 GHz GaAs pHEMT TRANSCEIVE MMIC FOR AUTOMOTIVE SENSOR APPLICATIONS

Tessmann, A. et al.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 207-210 -- IEEE; 1999 (pages 207-210) -- 1999

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RAMP-UP OF FIRST SiGe CIRCUITS FOR MOBILE COMMUNICATIONS: POSITIONING OF SiGe vs. GaAs AND SILICON

Klepser, B.-U. H.; Klein, W.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 37-40 -- IEEE; 1999 (pages 37-40) -- 1999

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HIGH POWER AND GAIN AT 35 GHz UTILIZING AN InAlGaAs/In~0~.~3~2Ga~0~.~6~8As METAMORPHIC HEMT

Whelan, C. S. et al.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 225-232 -- IEEE; 1999 (pages 225-232) -- 1999

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104 and 134 GHz InGaP/InGaAs HBT OSCILLATORS

Uchida, K. et al.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 237-240 -- IEEE; 1999 (pages 237-240) -- 1999

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HIGH RESOLUTION TRACK AND HOLD FOR BROADBAND WIRELESS APPLICATIONS

Shah, S.; McGarry, S.; Sitch, J.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 277-280 -- IEEE; 1999 (pages 277-280) -- 1999

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WIDE-BANDGAP-SEMICONDUCTOR WIDE-BANDWIDTH WIDE-TEMPERATURE-RANGE POWER AMPLIFIERS

Hwang, J. C. M. et al.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 51-54 -- IEEE; 1999 (pages 51-54) -- 1999

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HIGH-SPEED, LOW-POWER DIGITAL AND ANALOG CIRCUITS IMPLEMENTED IN IBM SiGe BiCMOS TECHNOLOGY

Fritz, K. E. et al.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 41-46 -- IEEE; 1999 (pages 41-46) -- 1999

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AN 800 MHz HBT CLASS-E AMPLIFIER WITH 74% PAE AT 3.0 VOLTS FOR GMSK

Wong, G. K.; Long, S. I.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 299-302 -- IEEE; 1999 (pages 299-302) -- 1999

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40 Gbit/s OPTICAL COMMUNICATIONS: InP DHBT TECHNOLOGY, CIRCUITS AND SYSTEM EXPERIMENTS

Godin, J. et al.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 185-188 -- IEEE; 1999 (pages 185-188) -- 1999

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POWER AMPLIFIER MODELING ISSUES AND ADVANCEMENT IN JAPAN

Watanabe, S.

GAAS IC symposium.; Gallium arsenide integrated circuit symposium; 21st annual GaAs IC symposium technical digest; Monterey, CA, 1999; Oct, 1999, 69-72 -- IEEE; 1999 (pages 69-72) -- 1999

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by this Author/Contributor:

  1. Wang, K. C.
  2. Madihan, M.
  3. Lao, Z.
  4. Sowers, J.
  5. Kobayashi, K. W.

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