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GaN FETs for High-Temperature and Microwave Applications

Binari, S. C.

EXTENDED ABSTRACTS- ELECTROCHEMICAL SOCIETY -ALL DIVISIONS-.; 188th Fall meeting; Chicago; IL, 1995; Oct, 1995, 894 -- The Society; 1995 Part: Part 2; -- 1995

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GaN Electronic Devices for Future Systems

Binari, S. C.

IEEE MTT-S International Microwave Symposium digest. VOL 3, ; 1999, 1081-1086 -- INSTITUTE OF ELECTRICAL ENGINEERS INC (IEEE) (pages 1081-1086) -- 1999

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GaN FETs for High-Temperature and Microwave Applications

Binari, S. C.; Ren, F.

Proceedings / Electrochemical Society PV.; Wide bandgap semiconductors and devices; Chicago; IL, 1995; Oct, 1995, 136-143 -- The Society; 1995 Part: Part; (pages 136-143) -- 1995

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Transmutation Doping of III-Nitrides

Popovici, G.; Binari, S. C.

Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 519-522 -- Warrendale, PA; Materials Research Society; 1999 (pages 519-522) -- 1999

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GaN Electronic Devices for Future Systems (Invited)

Binari, S. C.; Matloubian, M.

IEEE MTT-S International Microwave Symposium digest.; International microwave symposium; Anaheim; CA, 1999; Jun, 1999, 1081-1086 -- IEEE; 1999 Part: Part; (pages 1081-1086) -- 1999

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Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

Klein, P. B.; Binari, S. C.

Journal of physics. Condensed matter. VOL 15; PART 44, ; 2003, R1641-R1667 -- IOP PUBLISHING LTD (pages R1641-R1667) -- 2003

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Observation of charge storage in diamond MIS capacitors

Marchywka, M.; Binari, S. C.; Moses, D.

Electronics letters. VOL 30; NUMBER 4, ; 1994, 365 -- IEE Part: Part 4; -- 1994

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Low-frequency dispersion characteristics of GaN HFETs

Kruppa, W.; Binari, S. C.; Doverspike, K.

Electronics letters. VOL 31; NUMBER 22, ; 1995, 1951 -- IEE Part: Part 22; -- 1995

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Gain enhancement in InAlAs/InGaAs heterojunction bipolar transistors using an emitter ledge

Kyono, C. S.; Binari, S. C.; Ikossi-Anastasiou, K.

Journal of applied physics. VOL 76; NUMBER 3, ; 1994, 1954 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 3; -- 1994

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Experimental and Theoretical Analysis of the Hall-Mobility in n-Type Bulk 6H- and 4H-SiC

Mueller, S. G. et al.

Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 275-280 -- Warrendale, PA; Materials Research Society; 1999 (pages 275-280) -- 1999

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by this Author/Contributor:

  1. Binari, S. C.
  2. Burk, A. A.
  3. Nguyen, C
  4. Melloch, M. R.
  5. Katzer, D. S.

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