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2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. et al.

Materials science forum.; Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 /; Nurnberg, Germany, 2009; Oct, 2010, 1207-1210 -- Stafa-Zurich, Switzerland; United Kingdom; Trans Tech Publications; c2010 (pages 1207-1210) -- 2010

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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, M.J. et al.

Materials science forum.; Silicon carbide and related materials; Silicon carbide and related materials 2012; selected, peer reviewed papers from the 9th European conference on silicon carbide and related materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation; edited by Alexnder A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein; St. Petersburg, Russia, 2012; Sep, 2013, 553-556 -- Durnten-Zurich, Switzerland; Trans Tech Publications Ltd; 2013 Part; (pages 553-556) -- 2013

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by this Author/Contributor:

  1. Godignon, P.
  2. Millan, J.
  3. Placidi, M.
  4. Constant, A.
  5. Moreno, J.C.

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