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Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETs

IEEE Transactions on Electron Devices, December 2012, Vol.59(12), pp.3205-3211 [Peer Reviewed Journal]

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A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors

IEEE Electron Device Letters, October 2012, Vol.33(10), pp.1342-1344 [Peer Reviewed Journal]

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Dynamics of First and Second Switches in Bi Sr CaCu O Intrinsic Josephson Junction Stacks Measured by Specifically Designed Electronics

IEEE Transactions on Applied Superconductivity, June 2017, Vol.27(4), pp.1-5 [Peer Reviewed Journal]

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Impact of the High Vertical Electric Field on Low-Frequency Noise in Thin-Gate Oxide MOSFETs

IEEE Transactions on Electron Devices, December 2003, Vol.50(12), pp.2520-2527 [Peer Reviewed Journal]

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A Quantum-Mechanical View on the Capacitance of a Silicon p-n Junction

IEEE Electron Device Letters, April 2007, Vol.28(4), pp.312-314 [Peer Reviewed Journal]

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Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

IEEE Transactions on Electron Devices, July 2002, Vol.49(7), pp.1232-1241 [Peer Reviewed Journal]

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On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors

IEEE Transactions on Electron Devices, July 2015, Vol.62(7), pp.2292-2299 [Peer Reviewed Journal]

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Corrections to "Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors" [Jul 13 2128-2134]

IEEE Transactions on Electron Devices, October 2013, Vol.60(10), pp.3605-3605 [Peer Reviewed Journal]

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Optimization of Gate-on-Source-Only Tunnel FETs With Counter-Doped Pockets

IEEE Transactions on Electron Devices, August 2012, Vol.59(8), pp.2070-2077 [Peer Reviewed Journal]

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Comment on "Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening"

IEEE Transactions on Electron Devices, December 2016, Vol.63(12), pp.5077-5078 [Peer Reviewed Journal]

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  1. Padilla, J.L.
  2. Padilla, Jl
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