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Refined by: subject: Silicon-carbide thin films remove
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Committees

Madar, R.; Camassel, J.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, v -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 -- 2004

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Sponsors

Madar, R.; Camassel, J.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, vi -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 -- 2004

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Preface

Madar, R.; Camassel, J.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, vii-viii -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 (pages vii-viii) -- 2004

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Overview

Madar, R.; Camassel, J.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, ix -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 -- 2004

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Inelastic Stress Relaxation in Single Crystal SiC Substrates

Okojie, R. S.; Madar, R.; Camassel, J.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, 375-378 -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 (pages 375-378) -- 2004

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Diluted Nitric Oxide (NO) Annealing of SiO~2/4H-SiC in Cold-Wall Oxidation Furnace

Kosugi, R. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, 1345-1348 -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 (pages 1345-1348) -- 2004

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Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors

Ohashi, H.; Madar, R.; Camassel, J.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, 21-28 -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 (pages 21-28) -- 2004

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Dynamic of Laser Ablation in SiC

Medvid, A. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, 411-414 -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 (pages 411-414) -- 2004

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Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS

Wang, L.; Madar, R.; Camassel, J.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, 771-774 -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 (pages 771-774) -- 2004

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Electrical Transport Properties of n-Type 4H and 6H Silicon Carbide

Contreras, S. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; ICSCRM2003; Lyon, France, 2003; Oct, 2004, 555-560 -- Uetikon-Zuerich, Switzerland; Great Britain; Trans Tech Publications; 2004 (pages 555-560) -- 2004

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Results 1 - 10 of 395  for Everything in this catalogue

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