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Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Sensors, 01 January 2010, Vol.10(2), pp.1012-1020 [Peer Reviewed Journal]

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A Quantum-Mechanical View on the Capacitance of a Silicon p-n Junction

IEEE Electron Device Letters, April 2007, Vol.28(4), pp.312-314 [Peer Reviewed Journal]

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Coulomb blockade in PtSi/porous Si Schottky barrier as a two-dimensional multi-tunnelling junction
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Coulomb blockade in PtSi/porous Si Schottky barrier as a two-dimensional multi-tunnelling junction

Iet Circuits Devices & Systems, 2015 Mar, Vol.9(2), pp.81-86 [Peer Reviewed Journal]

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Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition

Nanotechnology, March 13, 2015, Vol.26(10), pp.1-9 [Peer Reviewed Journal]

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Three-state quantum dot gate field-effect transistor in silicon-on-insulator

IET Circuits, Devices & Systems, March 2015, Vol.9(2), pp.111-118 [Peer Reviewed Journal]

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On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors

IEEE Transactions on Electron Devices, July 2015, Vol.62(7), pp.2292-2299 [Peer Reviewed Journal]

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Three-dimensional nanostructures on Ge/Si(100) wetting layers: Hillocks and pre-quantum dots

Journal of Applied Physics, 28 May 2016, Vol.119(20) [Peer Reviewed Journal]

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Counterdoped Pocket Thickness Optimization of Gate-on-Source-Only Tunnel FETs

IEEE Transactions on Electron Devices, January 2013, Vol.60(1), pp.6-12 [Peer Reviewed Journal]

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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE Transactions on Electron Devices, February 2012, Vol.59(2), pp.292-301 [Peer Reviewed Journal]

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Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells

IEEE Journal of Quantum Electronics, February 2012, Vol.48(2), pp.187-197 [Peer Reviewed Journal]

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by this Author/Contributor:

  1. Verhulst, A. S.
  2. Kuo - Hsing Kao
  3. Murase, K
  4. Kurihara, K.
  5. Namatsu, H

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