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Measurement of the Temperature Dependence of Silicon Recombination Lifetimes

Johnston, S.; Ahrenkiei, R. K.; Ashok, S.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 607-612 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 607-612) -- 1998

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Compliant Substrates With an Embedded Twist Boundary

Lo, Y. H.; Zhu, Z. H.; Ashok, S.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 81-88 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 81-88) -- 1998

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Suppression of Antiphase Disorder in GaAs Grown on Relaxed GeSi Buffers by Metalorganic Chemical Vapor Deposition

Ting, S. M. et al.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 107-112 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 107-112) -- 1998

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Point Defect Characterization of Zn- and Cd-Based Semiconductors Using Positron Annihilation Techniques

Tessaro, G.; Mascher, P.; Ashok, S.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 583-588 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 583-588) -- 1998

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Highly Efficient Nitrogen Doping Into GaAs Using Low-Energy Nitrogen Molecular Ions

Shima, T. et al.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 73-80 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 73-80) -- 1998

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Athermal Annealing of Silicon

Grun, J. et al.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 395-402 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 395-402) -- 1998

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Deep-Level Traps in CCD Image Sensors

McColgin, W. C. et al.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 475-480 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 475-480) -- 1998

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Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

Ohtani, N. et al.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 37-46 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 37-46) -- 1998

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Characterization of a Metastable Defect Introduced in Epitaxially Grown Boron-Doped Si by 5.4 MeV à-Particles

Mamor, M. et al.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 449-454 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 449-454) -- 1998

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Deuterium Sintering of CMOS Technology for Improved Hot Carrier Reliability

Lee, J. et al.

Materials Research Society symposia proceedings.; Defect and impurity engineering semiconductors and devices; San Francisco; CA, 1998; Apr, 1998, 301-312 -- Warrendale, Pa.; Materials Research Society; 1998 (pages 301-312) -- 1998

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  1. McDaniel, D. L.
  2. Ashok, S.
  3. James, R. B.
  4. Canham, L. T.
  5. Claeys, C

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