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Refined by: subject: GaN related alloys MRS remove
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Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

Grenouillet, L. Bru-Chevallier, C. Guillot, G. Gilet, P. Ballet, P. Duvaut, P. Chenevas-Paule, A. Million, A.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G6.3 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Fabrication of GaN Layer with Low Dislocation Density Using Facet Controlled ELO Technique

Miyake, H. Mizutani, H. Hiramatsu, K. Iyechika, Y. Honda, Y.; Maeda, T.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G5.3 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Surface Modification of Cubic GaN Buffer Layer Grown by Metalorganic Vapor Phase Epitaxy

Nagayama, A. Katayama, R. Wu, J. Onabe, K. Sawada, H. Takuma, E.; Ichinose, H. Shiraki, Y.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G3.20 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Surface Segregation and Composition Fluctuations in Ammonia MBE and MOVPE of InGaN

Karpov, S. Y. Talalaev, R. A. Yakovlev, E. V. Makarov, Y. N.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G3.18 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Strain and Compositional Analysis of InGaN/GaN Layers

Pereira, S. Correia, M. R. Pereira, E. Trager-Cowan, C. Sweeney, F. Edwards, P. R. O Donnell, K. P. Alves, E. Sequeira, A. D.; Franco, N.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G3.52 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Surface Elevation and Strain in Ion Implanted GaN

Molnar, B. Qadri, S. B. Schiestel, S. Stroud, R. M. Carosella, C. A.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G11.53 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Structural and Elasticity-Based Properties of SiC-Based Interfaces: Their Relevance to the Heteroepitaxy of III-V Nitrides

Masri, P. Laridjani, M. R. Stauden, T. Pezoldt, J. Averous, M.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G3.49 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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8
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Group-III Nitride Quantum Heterostructures Emitting in the Whole Visible Range

Grandjean, N. Damilano, B. Massies, J.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G12.1 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Interaction Between Basal Stacking Faults and Prismatic Inversion Domain Boundaries in GaN

Komninou, P. Kioseoglou, J. Sarigiannidou, E. Dimitrakopulos, G. P.; Kehagias, T. Georgakilas, A. Nouet, G. Ruterana, P. Karakostas, T.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G3.44 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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Novel Cubic Zn~xMg~1~-~XO Epitaxial Heterostructures on Si (100) Substrates

Kvit, A. Narayan, J. Sharma, A. K. Jin, C. Muth, J. F. Teng, C. W. Holland, O. W.; Wetzel, C.

Materials Research Society symposia proceedings.; GaN and related alloys; Boston, MA, 2000; Nov, 2001, G3.53 -- Warrendale, Pa.; Materials Research Society; 2001 -- 2001

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