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1
Giant magnetoresistance effects on electromigration characteristics in spin valve read sensors during retrieving operation
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Giant magnetoresistance effects on electromigration characteristics in spin valve read sensors during retrieving operation

Journal Of Physics D-Applied Physics, 2012 May 16, Vol.45(19) [Peer Reviewed Journal]

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Reliability of large-scale grid-connected photovoltaic systems

Renewable Energy, 2011, Vol.36(9), pp.2334-2340 [Peer Reviewed Journal]

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Bonding and interfacial reaction between Ni foil and n-type PbTe thermoelectric materials for thermoelectric module applications
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Bonding and interfacial reaction between Ni foil and n-type PbTe thermoelectric materials for thermoelectric module applications

Journal Of Materials Science, 2014 Feb, Vol.49(4), pp.1716-1723 [Peer Reviewed Journal]

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Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
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Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

Applied Physics Letters, 2014 Jun 2, Vol.104(22) [Peer Reviewed Journal]

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Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation
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Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Applied Physics Letters, 2015 May 25, Vol.106(21) [Peer Reviewed Journal]

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Conductive atomic force microscopy studies on dielectric breakdown behavior of ultrathin Al2O3 films
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Conductive atomic force microscopy studies on dielectric breakdown behavior of ultrathin Al2O3 films

Applied Physics Letters, 2011 Feb 28, Vol.98(9) [Peer Reviewed Journal]

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Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC
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Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Journal Of Applied Physics, 2015 Jan 14, Vol.117(2) [Peer Reviewed Journal]

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Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs
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Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

Applied Physics Letters, 2017 Apr 17, Vol.110(16) [Peer Reviewed Journal]

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Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors
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Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters, 2012 Sep 24, Vol.101(13) [Peer Reviewed Journal]

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Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment
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Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment

Journal Of Applied Physics, 2013 May 28, Vol.113(20) [Peer Reviewed Journal]

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  1. Levitin, Gregory
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