skip to main content
Show Results with:
Refined by: subject: Engineering remove journal title: Solid State Electronics remove subject: Dopant Segregation remove
Result Number Material Type Add to My Shelf Action Record Details and Options
Material Type:
Add to My workspace

Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

Solid State Electronics, November 2011, Vol.65-66, pp.123-129 [Peer Reviewed Journal]

No full-text

View all versions

Refine Search Results

Try a new search

Ignore my search and look for everything

by this Author/Contributor:

  1. Flandre, D.
  2. Afzalian, A

Searching Remote Databases, Please Wait