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Conference Proceeding
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Influence of the C/Si ratio on the dopant concentration and defects in CVD grown 3C-SiC homoepitaxial layers

AIP Conference Proceedings, 2010, Vol.1292, pp.31-34 [Peer Reviewed Journal]

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Optical characterization of bulk mobility in 3C-SiC films grown on different orientation of Si substrates.

AIP Conference Proceedings, 2010, Vol.1292, pp.99-102 [Peer Reviewed Journal]

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Diamond and cubic boron nitride: Properties, growth and applications

AIP Conference Proceedings, 2010, Vol.1292, pp.191-196 [Peer Reviewed Journal]

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Effects of growth conditions on the low temperature photoluminescence spectra of (111) 3C-SiC layers grown by chemical vapor deposition on 3C-SiC seeds grown by the vapor-liquid-solid technique

AIP Conference Proceedings, 2010, Vol.1292, pp.119-122 [Peer Reviewed Journal]

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