skip to main content
Show Results with:
Refined by: material type: Conference Proceedings remove journal title: AIP Conference Proceedings remove subject: Crystals remove
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Material Type:
Conference Proceeding
Add to My workspace

Defects and polytypism in SiC : the role of diffuse X-ray scattering

2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, Vol.1292, pp.43-46 [Peer Reviewed Journal]

No full-text

View all versions
2
Material Type:
Conference Proceeding
Add to My workspace

Vapor phase vs. liquid phase: What is the best choice for the growth of bulk 3C-SiC crystals?

AIP Conference Proceedings, 2010, Vol.1292, pp.1-6 [Peer Reviewed Journal]

No full-text

3
Material Type:
Conference Proceeding
Add to My workspace

Study of the stability of 3C-SiC single crystals using high resolution diffuse X-ray scattering

2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, Vol.1292, pp.71-74 [Peer Reviewed Journal]

No full-text

View all versions
4
Material Type:
Conference Proceeding
Add to My workspace

Evolution of diamond crystal shape with boron concentration during CVD growth

AIP Conference Proceedings, 2010, Vol.1292, pp.149-153 [Peer Reviewed Journal]

No full-text

5
Material Type:
Conference Proceeding
Add to My workspace

Polarity enhancement in high oriented ZnO films on Si (100) substrate

The 3rd International Conference On Advanced Materials Science And Technology (Icamst 2015), Semarang, Indonesia (6–7 October 2015): AIP Conference Proceedings, 19 April 2016, Vol.1725(1) [Peer Reviewed Journal]

Full text available

View all versions
6
Material Type:
Conference Proceeding
Add to My workspace

Magnetic properties of ZnSe crystals doped with transition metals

AIP Conference Proceedings, 2010, Vol.1292, pp.197-200 [Peer Reviewed Journal]

No full-text

View all versions
7
Material Type:
Conference Proceeding
Add to My workspace

Effects of growth conditions on the low temperature photoluminescence spectra of (111) 3C-SiC layers grown by chemical vapor deposition on 3C-SiC seeds grown by the vapor-liquid-solid technique

AIP Conference Proceedings, 2010, Vol.1292, pp.119-122 [Peer Reviewed Journal]

No full-text

Refine Search Results

Try a new search

Ignore my search and look for everything

by this Author/Contributor:

  1. Chaussende, D
  2. Dompoint, D.
  3. Dompoint, Deborah
  4. Galben-Sandulache, I
  5. Boulle, A.

Searching Remote Databases, Please Wait