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2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. et al.

Materials science forum.; Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 /; Nurnberg, Germany, 2009; Oct, 2010, 1207-1210 -- Stafa-Zurich, Switzerland; United Kingdom; Trans Tech Publications; c2010 (pages 1207-1210) -- 2010

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by this Author/Contributor:

  1. Placidi, M.
  2. Millan, J.
  3. Moreno, J.C.
  4. Cordier, Y.
  5. Godignon, P.

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