skip to main content
Show Results with:
results 1 2 next page
Refined by: material type: Conference Proceedings remove journal title: AIP Conference Proceedings remove subject: 3c-Sic remove
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Material Type:
Conference Proceeding
Add to My workspace

TEM investigation of the influence of the Ga-doping on the structure of 3C-SiC layers grown on 6H-SiC substrate by VLS mechanism

AIP Conference Proceedings, 2010, Vol.1292, pp.59-62 [Peer Reviewed Journal]

No full-text

2
Material Type:
Conference Proceeding
Add to My workspace

High quality ohmic contacts on n-type 3C-SiC obtained by high and low process temperature

AIP Conference Proceedings, 2010, Vol.1292, pp.51-54 [Peer Reviewed Journal]

No full-text

View all versions
3
Material Type:
Conference Proceeding
Add to My workspace

Structural evolution of 3C-SiC grown by sublimation epitaxy

AIP Conference Proceedings, 2010, Vol.1292, pp.27-30 [Peer Reviewed Journal]

No full-text

4
Material Type:
Conference Proceeding
Add to My workspace

Deep levels in hetero-epitaxial as-grown 3C-SiC

AIP Conference Proceedings, 2010, Vol.1292, pp.63-66 [Peer Reviewed Journal]

No full-text

5
Material Type:
Conference Proceeding
Add to My workspace

Vapor phase vs. liquid phase: What is the best choice for the growth of bulk 3C-SiC crystals?

AIP Conference Proceedings, 2010, Vol.1292, pp.1-6 [Peer Reviewed Journal]

No full-text

6
Material Type:
Conference Proceeding
Add to My workspace

Rapid thermal oxynitridation and hydrogenation of 3C-SiC/Si using N 2 O and H 2 ambient

AIP Conference Proceedings, 2010, Vol.1292, pp.67-70 [Peer Reviewed Journal]

No full-text

View all versions
7
Material Type:
Conference Proceeding
Add to My workspace

Evolution of the electrical characteristics of Pt/3C-SiC Schottky contacts upon thermal annealing

AIP Conference Proceedings, 2010, Vol.1292, pp.75-78 [Peer Reviewed Journal]

No full-text

8
Material Type:
Conference Proceeding
Add to My workspace

Impact of morphological features on the dielectric breakdown at SiO 2 /3C-SiC interfaces

AIP Conference Proceedings, 2010, Vol.1292, pp.47-50 [Peer Reviewed Journal]

No full-text

9
Material Type:
Conference Proceeding
Add to My workspace

Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)

AIP Conference Proceedings, 2010, Vol.1292, pp.55-58 [Peer Reviewed Journal]

No full-text

10
Material Type:
Conference Proceeding
Add to My workspace

Influence of the C/Si ratio on the dopant concentration and defects in CVD grown 3C-SiC homoepitaxial layers

AIP Conference Proceedings, 2010, Vol.1292, pp.31-34 [Peer Reviewed Journal]

No full-text

results 1 2 next page

Searching Remote Databases, Please Wait