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3c-Sic
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AIP Conference Proceedings
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3c-Sic
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Conference Proceeding
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TEM investigation of the influence of the Ga-doping on the structure of 3C-SiC layers grown on 6H-SiC substrate by VLS mechanismAIP Conference Proceedings, 2010, Vol.1292, pp.59-62 [Peer Reviewed Journal]No full-text |
| 2 |
Material Type: Conference Proceeding
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High quality ohmic contacts on n-type 3C-SiC obtained by high and low process temperatureAIP Conference Proceedings, 2010, Vol.1292, pp.51-54 [Peer Reviewed Journal]No full-text |
| 3 |
Material Type: Conference Proceeding
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Structural evolution of 3C-SiC grown by sublimation epitaxyAIP Conference Proceedings, 2010, Vol.1292, pp.27-30 [Peer Reviewed Journal]No full-text |
| 4 |
Material Type: Conference Proceeding
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Deep levels in hetero-epitaxial as-grown 3C-SiCAIP Conference Proceedings, 2010, Vol.1292, pp.63-66 [Peer Reviewed Journal]No full-text |
| 5 |
Material Type: Conference Proceeding
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Vapor phase vs. liquid phase: What is the best choice for the growth of bulk 3C-SiC crystals?AIP Conference Proceedings, 2010, Vol.1292, pp.1-6 [Peer Reviewed Journal]No full-text |
| 6 |
Material Type: Conference Proceeding
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Rapid thermal oxynitridation and hydrogenation of 3C-SiC/Si using N 2 O and H 2 ambientAIP Conference Proceedings, 2010, Vol.1292, pp.67-70 [Peer Reviewed Journal]No full-text |
| 7 |
Material Type: Conference Proceeding
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Evolution of the electrical characteristics of Pt/3C-SiC Schottky contacts upon thermal annealingAIP Conference Proceedings, 2010, Vol.1292, pp.75-78 [Peer Reviewed Journal]No full-text |
| 8 |
Material Type: Conference Proceeding
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Impact of morphological features on the dielectric breakdown at SiO 2 /3C-SiC interfacesAIP Conference Proceedings, 2010, Vol.1292, pp.47-50 [Peer Reviewed Journal]No full-text |
| 9 |
Material Type: Conference Proceeding
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Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)AIP Conference Proceedings, 2010, Vol.1292, pp.55-58 [Peer Reviewed Journal]No full-text |
| 10 |
Material Type: Conference Proceeding
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Influence of the C/Si ratio on the dopant concentration and defects in CVD grown 3C-SiC homoepitaxial layersAIP Conference Proceedings, 2010, Vol.1292, pp.31-34 [Peer Reviewed Journal]No full-text |
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