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Subthreshold slope in polycrystalline silicon thin-film transistors and effect of the gate oxide on the subthreshold characteristics

Dimitriadis, C. A.

Applied physics letters. VOL 67; NUMBER 25, ; 1995, 3738-3740 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 25; (pages 3738-3740) -- 1995

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On the threshold voltage and channel conductance of polycrystalline silicon thin-film transistors

Dimitriadis, C. A.; Tassis, D. H.

Journal of applied physics. VOL 79; NUMBER 8//1, ; 1996, 4431-4437 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 8//1; (pages 4431-4437) -- 1996

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Low-frequency noise of the leakage current in undoped low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors

Dimitriadis, C. A.; Brini, J.; Kamarinos, G.

Applied physics letters. VOL 70; NUMBER 7, ; 1997, 880-882 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 7; (pages 880-882) -- 1997

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Origin of low frequency noise in polycrystalline silicon thin-film transistors

Dimitriadis, C. A. Brini, J. Kamarinos, G.

Thin solid films. VOL 427; NUMBER 1-2, ; 2003, 113-116 -- Elsevier Science B.V., Amsterdam. (pages 113-116) -- 2003

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Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

Pappas, I. et al.

Solid-state electronics. VOL 53; NUMBER 1, ; 2009, 54-56 -- Elsevier Science B.V., Amsterdam. (pages 54-56) -- 2009

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Comparison of two analog buffers implemented with low-temperature polysilicon thin-film transistors for active matrix displays applications

Pappas, I. et al.

Physica status solidi. C, Conferences and critical reviews. VOL 5; NUMBER 12, ; 2008, 3854-3857 -- John Wiley & Sons, Ltd (pages 3854-3857) -- 2008

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Characterization of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon Thin-Film Transistors by Low-Frequency Noise Measurements

Dimitriadis, C. A. et al.

Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers. VOL 37; NUMBER 1; ISSUE 473, ; 1998, 72-77 -- JAPANESE JOURNAL OF APPLIED PHYSICS Part: Part 1; (pages 72-77) -- 1998

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Origin of the low-frequency noise in n-channel FinFETs

Theodorou, C. G. et al.

Solid-state electronics. VOL 82, ; 2013, 21-24 -- Elsevier Science B.V., Amsterdam. Part; (pages 21-24) -- 2013

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Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5@mm down to 20nm

Ioannidis, E. G. et al.

Solid-state electronics. VOL 95, ; 2014, 28-31 -- Elsevier Science B.V., Amsterdam. Part; (pages 28-31) -- 2014

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Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric

Oproglidis, T. A. et al.

IEEE transactions on electron devices. Volume 66:Number 10 (2019, September 19th); pp 4486-4489 -- Institute of Electrical and Electronics Engineers

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