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X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals

Milita, S. et al.

Materials science forum.; Silicon carbide, III-nitrides and related materials; Stockholm, 1997; Sep, 1998, 29-32 -- Trans tech publications; 1998 (pages 29-32) -- 1998

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X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals

Milita, S. et al.

Materials science forum.; Silicon carbide, III-nitrides and related materials; Stockholm, 1997; Sep, 1998, 29-32 -- Trans tech publications; 1998 (pages 29-32) -- 1998

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Defect Reduction in SiC Crystals Grown by the Modified Lely Method

Anikin, M. M. et al.

Materials science forum.; European conference on silicon carbide and related materials; Linkoping, Sweden, 2002; Sep, 2003, 83-86 -- Trans Tech Publications; 2003 (pages 83-86) -- 2003

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Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method

Pisch, A. Blanquet, E. Pons, M. Bernard, C. Dedulle, J. M. Madar, R.; Hundhausen, M.

Materials science forum.; European conference on silicon carbide and related materials; Kloster Banz, Germany, 2000; Sep, 2001, 61-64 -- Trans Tech Publications; 2001 (pages 61-64) -- 2001

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Towards a Continuous Feeding of the PVT Growth Process: an Experimental Investigation

Chaussende, D. et al.

Materials science forum.; European conference on silicon carbide and related materials; Linkoping, Sweden, 2002; Sep, 2003, 25-28 -- Trans Tech Publications; 2003 (pages 25-28) -- 2003

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Heat Transfer Modeling of a New Crystal Growth Process

Baillet, F. et al.

Materials science forum.; European conference on silicon carbide and related materials; Linkoping, Sweden, 2002; Sep, 2003, 103-106 -- Trans Tech Publications; 2003 (pages 103-106) -- 2003

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A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process

Charpentier, L. et al.

Materials science forum.; European conference on silicon carbide and related materials; Linkoping, Sweden, 2002; Sep, 2003, 87-90 -- Trans Tech Publications; 2003 (pages 87-90) -- 2003

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3C-SiC Growth on 6H-SiC (0001) Substrates

Matko, I. Chenevier, B. Audier, M. Madar, R. Diani, M. Simon, L.; Kubler, L. Aubel, D.; Yoshida, S.

Materials science forum.; International conference on silicon carbide and related materials; Tsukuba, Japan, 2001; Oct, 2002, 315-318 -- Trans Tech Publications; 2002 Part: Part 1; (pages 315-318) -- 2002

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Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography

Pernot, E. Neyret, E. Moulin, C. Pernot-Rejmankova, P. Templier, F. Di Cioccio, L. Billon, T. Madar, R.; Yoshida, S.

Materials science forum.; International conference on silicon carbide and related materials; Tsukuba, Japan, 2001; Oct, 2002, 419-422 -- Trans Tech Publications; 2002 Part: Part 1; (pages 419-422) -- 2002

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Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals

Pernot, E. Anikin, M. Pons, M. Chaix-Pluchery, O. Baillet, F.; Matko, I. Madar, R.; Yoshida, S.

Materials science forum.; International conference on silicon carbide and related materials; Tsukuba, Japan, 2001; Oct, 2002, 143-146 -- Trans Tech Publications; 2002 Part: Part 1; (pages 143-146) -- 2002

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  1. Madar, R.
  2. Bergman, P.
  3. Janzen, E.
  4. Pernot, E.
  5. Pons, M.

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