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Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy

Chaussende, D. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 71-76 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 71-76) -- 2009

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Top Seeded Solution Growth of 3C-SiC Single Crystals

Mercier, F. et al.

Materials science forum.; European Conference on Silicon Carbide and Related Materials; 2008 :, Barcelona, Spain, 2009, 41-44 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 Part; (pages 41-44) -- 2009

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Dislocation-Induced Birefringence in Silicon Carbide

Ouisse, T. et al.

Materials science forum.; European Conference on Silicon Carbide and Related Materials; 2008 :, Barcelona, Spain, 2009, 271-274 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 Part; (pages 271-274) -- 2009

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Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling

Pons, M. et al.

Materials science forum.; International Conference on Silicon Carbide and Related Materials; Otsu, Japan, 2007; Oct, 2009, 83-88 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 (pages 83-88) -- 2009

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Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

Chaussende, D. et al.

Materials science forum.; European Conference on Silicon Carbide and Related Materials; 2008 :, Barcelona, Spain, 2009, 31-36 -- Stafa-Zurich; United Kingdom; Trans Tech Publications; 2009 Part; (pages 31-36) -- 2009

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5 results  for Everything in this catalogue

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  1. Pons, M.  (4)
  2. Mercier, F.  (3)
  3. Wellmann, P.J.  (1)
  4. Dedulle, J.  (1)
  5. Nishizawa, S.I.  (1)
  6. Eid, J.  (1)
  7. Ouisse, T.  (1)
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by this Author/Contributor:

  1. Chaussende, D.
  2. Madar, R
  3. Pons, M.
  4. Mercier, F.
  5. Wellmann, P.J.

on this subject:

  1. silicon carbide

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