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Spectral, temporal, and spatial characteristics of plasma-induced self-phase modulation of a subpicosecond excimer laser pulse (Invited Paper) [2116-53]

Le Blanc, S. P. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL Part: Part 2116; -- 1994

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Sub-0.1-æm vertical MOS transistor [3881-06]

Mori, K.; Burnett, D.; Tsuchiya, T.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL (pages 73-76) -- 1999

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3
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Drain profile engineering for MOSFET devices with channel lengths below 100 nm [3881-23]

Saha, S. K.; Burnett, D.; Tsuchiya, T.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL (pages 195-205) -- 1999

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Improvement of edge leakage in PBL-isolated SOI NMOSFETs [3212-28]

Burnett, D. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL Part: Part 3212; (pages 248-257) -- 1997

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Sub-half Micron Device Fabricated with Two Microns Generation Facilities [3506-12]

Mori, K. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL (pages 132-140) -- 1998

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6
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SiGe/Si vertical PMOSFET device design and fabrication [3212-38]

Liu, K. C. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL Part: Part 3212; (pages 336-341) -- 1997

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7
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Strained-Si NMOSFET on relaxed Si~1~-~xGe~x formed by ion implantation of Ge [3212-15]

John, S. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL Part: Part 3212; (pages 129-135) -- 1997

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Si~1~-~x~-~yGe~xC~y channel heterojunction PMOSFETs [3212-40]

John, S. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL Part: Part 3212; (pages 354-359) -- 1997

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9
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Yield Management by Threshold Voltage Adjustment in Back-End Process [3506-18]

Ito, S. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL (pages 184-191) -- 1998

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10
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Low threshold 0.6 æm MOSFET for low voltage RF applications [3212-22]

Litwin, A. et al.

SPIE INTERNATIONAL SOCIETY FOR OPTICAL Part: Part 3212; (pages 188-196) -- 1997

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by this Author/Contributor:

  1. Tsuchiya, T.
  2. Burnett, D
  3. Wristers, D.
  4. Rodder, M.
  5. Saha, S. K.

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