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Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al~2O~3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

Choe, B.-I. et al.

Materials Research Society symposia proceedings.; Science and technology of nonvolatile memories; San Francisco, Calif., 2006; Apr, 2006, 13-18 -- Materials Research Society; 2006 Part: Part; (pages 13-18) -- 2006

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Charge Trapping Memory Cell of TANOS (Oxide-SiN-Al~2O~3-TaN) Structure Erased by Fowler-Nordheim Tunneling of Holes

Choe, B.-I. et al.

Materials Research Society symposia proceedings.; Electrobiological interfaces on soft substrates; San Francisco, Calif., 2006; Apr, 2006, 13-18 -- Materials Research Society; 2006 Part: Part; (pages 13-18) -- 2006

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by this Author/Contributor:

  1. Choi, J
  2. Kang, C.
  3. Sel, J.
  4. Sim, J.
  5. Shin, Y.

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