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The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates

Lukyanchikova, N. et al.

Materials science in semiconductor processing.; Germanium based semiconductors from materials to devices; Nice, France, 2006; May, 2006, 727-731 -- Elsevier; 2006 (pages 727-731) -- 2006

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Observation of quantum Hall effect in 2D-electron gas confined in GaN/GaAlN heterostructure

Contreras, S. et al.

Materials science and engineering. B, Solid-state materials for advanced technology.; High temperature electronics: materials, devices and applications; Strasbourg; France, 1994; Jun, 1997, 92-95 -- Elsevier; 1997 Part: Part 1/3; (pages 92-95) -- 1997

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by this Author/Contributor:

  1. Lokshin, M.
  2. Mitrovic, I. Z.
  3. Knap, W
  4. Claeys, C.
  5. Contreras, S

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