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Cryogenic investigations and modelling of inter-defect charge exchange in silicon particle detectors

MacEvoy, B. C. Hall, G. Santocchia, A.; Watts, S.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms.; Defect engineering of advanced semiconductor devices; Strasbourg, France, 2001; Jun, 2002, 138-143 -- Elsevier; 2002 (pages 138-143) -- 2002

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An enhanced approach to numerical modeling of heavily irradiated silicon devices

Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G. M. MacEvoy, B. C. Hall, G. Placidi, P.; Watts, S.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms.; Defect engineering of advanced semiconductor devices; Strasbourg, France, 2001; Jun, 2002, 171-175 -- Elsevier; 2002 (pages 171-175) -- 2002

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Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes

Goetz, W. Kern, R. S. Chen, C. H. Liu, H.; Hangleiter, A.

Materials science and engineering. B, Solid-state materials for advanced technology.; Nitrides and related wide band gap materials; Strasbourg; France, 1998; Jun, 1999, 211-217 -- Elsevier; 1999 (pages 211-217) -- 1999

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3 results  for Everything in this catalogue

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