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Cryogenic investigations and modelling of inter-defect charge exchange in silicon particle detectors

MacEvoy, B. C. Hall, G. Santocchia, A.; Watts, S.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms.; Defect engineering of advanced semiconductor devices; Strasbourg, France, 2001; Jun, 2002, 138-143 -- Elsevier; 2002 (pages 138-143) -- 2002

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An enhanced approach to numerical modeling of heavily irradiated silicon devices

Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G. M. MacEvoy, B. C. Hall, G. Placidi, P.; Watts, S.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms.; Defect engineering of advanced semiconductor devices; Strasbourg, France, 2001; Jun, 2002, 171-175 -- Elsevier; 2002 (pages 171-175) -- 2002

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The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates

Lukyanchikova, N. et al.

Materials science in semiconductor processing.; Germanium based semiconductors from materials to devices; Nice, France, 2006; May, 2006, 727-731 -- Elsevier; 2006 (pages 727-731) -- 2006

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Low-temperature conductance measurements of surface states in HfO2-Si structures with different gate materials

Gomeniuk, Y. et al.

Materials science in semiconductor processing.; Symposium on characterization of high-k dielectric materials; Proceedings of E-MRS spring meeting symposium L; Nice, France, 2006; May, 2006, 980-984 -- Elsevier; 2006 Part: Part 6; (pages 980-984) -- 2006

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Observation of quantum Hall effect in 2D-electron gas confined in GaN/GaAlN heterostructure

Contreras, S. et al.

Materials science and engineering. B, Solid-state materials for advanced technology.; High temperature electronics: materials, devices and applications; Strasbourg; France, 1994; Jun, 1997, 92-95 -- Elsevier; 1997 Part: Part 1/3; (pages 92-95) -- 1997

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Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes

Goetz, W. Kern, R. S. Chen, C. H. Liu, H.; Hangleiter, A.

Materials science and engineering. B, Solid-state materials for advanced technology.; Nitrides and related wide band gap materials; Strasbourg; France, 1998; Jun, 1999, 211-217 -- Elsevier; 1999 (pages 211-217) -- 1999

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Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers

Wosinski, T. et al.

Journal of alloys and compounds.; Magnetoelectronics: papers presented at the E-MRS Fall meeting, symposium D; Warsaw, Poland, 2005; Sep, 2006, 248-251 -- Elsevier; 2006 (pages 248-251) -- 2006

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Imaging features and safety and efficacy of endovascular stroke treatment: a meta-analysis of individual patient-level data

Berkhemer, Olvert A et al.

The Lancet neurology. Volume 17:Issue 10 (2018); pp 895-904 -- Elsevier

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by this Author/Contributor:

  1. Hall, S
  2. Buiu, O.
  3. Watts, S.
  4. San Roman, L
  5. Siddiqui, A

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