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A 0.1- Formula Not Shown 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Kang, S. et al.

IEEE journal of solid-state circuits. VOL 42; NUMB 1, ; 2007, 210-218 -- IEEE; 1998 (pages 210-218) -- 2007

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A 0.1-mum 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Kang, S. et al.

IEEE journal of solid-state circuits.; International solid-state circuits conference; San Francisco, CA, 2006; Feb, 2007, 210-218 -- IEEE,; 2007 Part: Part 1; (pages 210-218) -- 2007

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A 0.18-mum 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM)

Cho, W. Y. et al.

IEEE journal of solid-state circuits. VOL 40; NUMB 1, ; 2005, 293-300 -- IEEE; 1998 Part: Part 1; (pages 293-300) -- 2005

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A 0.18-mum 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM)

Cho, W. Y. et al.

IEEE journal of solid-state circuits.; IEEE international solid-state circuits conference; IEEE 2004 ISSCC, digital, technology directions, memory and signal processing; , 2004; Feb, 2005, 293-300 -- IEEE Solid-State Circuits Society,; 2005 Part: Part 1; (pages 293-300) -- 2005

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10:15 C-7-4L Low Resistance Ni Thin Film Deposition for Nickel Silicide by Atomic Layer Deposition

Do, K. W. et al.

Business Center for Academic Societies; 1998 (pages 898-899) -- 2005

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10:15 C-7-4L Low Resistance Ni Thin Film Deposition for Nickel Silicide by Atomic Layer Deposition

Do, K. W. et al.

SOLID STATE DEVICES AND MATERIALS.; Solid state devices and materials; Kobe, Japan, 2005; Sep, 2005, 898-899 -- Japan Society of Applied Physics; 2005 (pages 898-899) -- 2005

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1096: Imaging Findings of Premammary & Retromammary Lesions on Breast Sonography

Lee, J. H. et al.

Ultrasound in medicine & biology. VOL 35; NUMB 8; SUPP, ; 2009, S123-S124 -- Elsevier Science B.V., Amsterdam. Part 8; (pages S123-S124) -- 2009

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A 10b 100 MS/s 1.4 mm^2 56 mW 0.18 mum CMOS A/D Converter with 3-D Fully Symmetrical Capacitors

Min, B.-H. et al.

IEICE transactions on electronics. VOL 89; NUMB 5, ; 2006, 630-635 -- INSTITUTE OF ELECTRONICS, INFORMATION & (pages 630-635) -- 2006

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11:30 B-4-2 Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology

Cho, W. et al.

Business Center for Academic Societies; 1998 (pages 190-191)

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11:30 B-4-2 Highly Manufacturable 64M bit Ultra Low Power SRAM Using a Novel 3-Dimensional S^3 (Stacked Single-crystal Si) Cell Technology

Cho, W. et al.

SOLID STATE DEVICES AND MATERIALS.; Solid state devices and materials; Solid state devices and materials 2004; Tokyo, 2004; Sep, 2004, 190-191 -- JSAP; 2004 (pages 190-191) -- 2004

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