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Cristallogene du carbure de silicium: principes, elaboration, caracterisation et modelisation

Madar, R. Pons, M.

Sfv; 1999 (pages 325-379) -- 2000

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CVD process for copper interconnection

Marcadal, C. et al.

Vide : science, technique et applications. VOL 53; NUMBER 283//SUP, ; 1997, 15-17 -- DIVISION DE LA SOCIETE FRANCAISE DU VIDE Part: Part 283//; (pages 15-17) -- 1997

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Raman study of tungsten disilicide formation in thin films

Chaix-Pluchery, O. et al.

Vide : science, technique et applications. VOL 53; NUMBER 283//SUP, ; 1997, 176-177 -- DIVISION DE LA SOCIETE FRANCAISE DU VIDE Part: Part 283//; (pages 176-177) -- 1997

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LPCVD Me-Si-N (Me = Ta, Ti, W, Re) diffusion barriers in Si/SiO~2/Cu metallizations

Blanquet, E. et al.

Vide : science, technique et applications. VOL 53; NUMBER 283//SUP, ; 1997, 53 -- DIVISION DE LA SOCIETE FRANCAISE DU VIDE Part: Part 283//; -- 1997

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Some electronic properties of single crystalline NiSi

Meyer, B. et al.

Vide : science, technique et applications. VOL 53; NUMBER 283//SUP, ; 1997, 180 -- DIVISION DE LA SOCIETE FRANCAISE DU VIDE Part: Part 283//; -- 1997

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Lattice dynamics of transition metal disilicides

Chaix-Pluchery, O. et al.

Vide : science, technique et applications. VOL 53; NUMBER 283//SUP, ; 1997, 204-205 -- DIVISION DE LA SOCIETE FRANCAISE DU VIDE Part: Part 283//; (pages 204-205) -- 1997

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6 results  for Everything in this catalogue

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by this Author/Contributor:

  1. Madar, R.
  2. Chaix-Pluchery, O.
  3. Laborde, O.
  4. Schober, H.
  5. Madar, R. Pons, M.

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