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The structural state of epitaxial ZnO layers assessed by measuring the integral intensity of three- and two-beam X-ray diffraction

Kyutt, R. N.; Ivanov, S. V.

Technical physics letters. VOL 40; NUMBER 10, ; 2014, 894-896 -- Springer Science + Business Media Part 10; (pages 894-896) -- 2014

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X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy

Ratnikov, V. V. et al.

Technical physics letters. VOL 42; NUMBER 4, ; 2016, 419-422 -- Springer Science + Business Media (pages 419-422) -- 2016

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Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy

Zolotukhin, D. S. et al.

Technical physics letters. VOL 43; NUMBER 3, ; 2017, 262-266 -- Springer Science + Business Media

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Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides

Jmerik, V. N. et al.

Technical physics letters. VOL 33; NUMBER 4, ; 2007, 333-336 -- Springer Science + Business Media (pages 333-336) -- 2007

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Studying local surface electric conductivity of a ZnSe/CdSe/ZnSe heterostructure by scanning tunneling microscopy in the field electron emission regime

Masalov, S. A. et al.

Technical physics letters. VOL 35; NUMBER 6, ; 2009, 504-507 -- Springer Science + Business Media Part 6; (pages 504-507) -- 2009

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Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy

Nechaev, D. V. et al.

Technical physics letters. VOL 43; NUMBER 5, ; 2017, 443-446 -- Springer Science + Business Media

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Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

Mamutin, V. V. et al.

Technical physics letters. VOL 25; NUMBER 1, ; 1999, 1-3 -- AMERICAN INSTITUTE OF PHYSICS (pages 1-3) -- 1999

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RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures

Nechaev, D. V. et al.

Technical physics letters. VOL 38; NUMBER 5, ; 2012, 443-445 -- Springer Science + Business Media Part: Part 5; (pages 443-445) -- 2012

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Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

Mamutin, V. V. et al.

Technical physics letters. VOL 24; NUMBER 6, ; 1998, 467-469 -- AMERICAN INSTITUTE OF PHYSICS (pages 467-469) -- 1998

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Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

Sakharov, A. V. et al.

Technical physics letters. VOL 23; NUMBER 4, ; 1997, 305-306 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 4; (pages 305-306) -- 1997

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by this Author/Contributor:

  1. Ivanov, S. V.
  2. Ivanov-Omskii, V. I.
  3. Yastrebov, S. G.
  4. Kop'ev, P. S.
  5. Jmerik, V. N.

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