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29.1 On the Dispersive Versus Arrhenius Temperature Activation of NBTI Time Evolution in Plasma Nitrided Gate Oxides: Measurements, Theory, and Implications

Varghese, D. et al.

Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 701-704 -- Institute of Electrical and Electronics Engineers; 2005 (pages 701-704)

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by this Author/Contributor:

  1. Ahmed, K
  2. Saha, D.
  3. Mahapatra, S.
  4. Alam, M
  5. Varghese, D.

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  1. electron devices
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