skip to main content
Show Results with:

1 results  for Everything in this catalogue

Result Number Material Type Add to My Shelf Action Record Details and Options
Material Type:
Add to My workspace

29.1 On the Dispersive Versus Arrhenius Temperature Activation of NBTI Time Evolution in Plasma Nitrided Gate Oxides: Measurements, Theory, and Implications

Varghese, D. et al.

Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 701-704 -- Institute of Electrical and Electronics Engineers; 2005 (pages 701-704)

Check library holdings

1 results  for Everything in this catalogue

Refine Search Results

Try a new search

Ignore my search and look for everything

by this Author/Contributor:

  1. Ahmed, K
  2. Saha, D.
  3. Mahapatra, S.
  4. Alam, M
  5. Varghese, D.

on this subject:

  1. electron devices
  2. IEDM
  3. IEEE

Searching Remote Databases, Please Wait