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Results 1 - 10 of 11  for Everything in this catalogue

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11.4 Nanoelectromechanical DRAM for Ultra-Large-Scale Integration (ULSI)

Jang, J. E. et al.

IEEE; 1998 (pages 269-272)

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11.4 Nanoelectromechanical DRAM for Ultra-Large-Scale Integration (ULSI)

Jang, J. E. et al.

Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 269-272 -- Institute of Electrical and Electronics Engineers; 2005 (pages 269-272)

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35.5 Novel Transition Layer Engineered Si Nanocrystal Flash Memory with MHSOS Structure Featuring Large V~t~h Window and Fast P/E Speed

Joo, K.-H. et al.

Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 885-888 -- Institute of Electrical and Electronics Engineers; 2005 (pages 885-888)

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35.5 Novel Transition Layer Engineered Si Nanocrystal Flash Memory with MHSOS Structure Featuring Large V~t~h Window and Fast P/E Speed

Joo, K.-H. et al.

IEEE; 1998 (pages 885-888)

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5
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12.5 A Novel Methodology on Tuning Work Function of Metal Gate Using Stacking Bi-Metal Layers

Jeon, I. S. et al.

Technical digest / International Electron Devices Meeting.; Electron devices; International electron devices meeting 2004; San Francisco, CA, 2004; Dec, 0, 303-306 -- IEEE; 2004 Part: Part; (pages 303-306)

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Robust Ternary Metal Gate Electrodes for Dual Gate CMOS Devices

Park, D.-G. Cha, T.-H. Lim, K.-Y. Cho, H.-J. Kim, T.-K. Jang, S.-A. Suh, Y.-S. Misra, V. Yeo, I.-S. Roh, J.-S.

Technical digest / International Electron Devices Meeting.; International electron devices meeting; Washington, DC, 2001; Dec, 0, 671-676 -- IEEE; 2001 (pages 671-676)

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Robust Ternary Metal Gate Electrodes for Dual Gate CMOS Devices

Park, D.-G. Cha, T.-H. Lim, K.-Y. Cho, H.-J. Kim, T.-K. Jang, S.-A. Suh, Y.-S. Misra, V. Yeo, I.-S. Roh, J.-S.

IEEE; 1998 (pages 671-676)

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Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) for Single Transistor Memory Using Poly-Si source/Drain and BaMgF~4 Dielectric

Lyu, J. S. et al.

INSTITUTE OF ELECTRICAL & ELECTRONIC ENGINEERS, INC (IEEE) Part: Part; (pages 503-506) -- 1996

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Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) for Single Transistor Memory Using Poly-Si source/Drain and BaMgF~4 Dielectric

Lyu, J. S. et al.

Technical digest / International Electron Devices Meeting.; Electron devices; San Francisco; CA, 1996; Dec, 1996, 503-506 -- IEEE; 1996 Part: Part; (pages 503-506) -- 1996

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10
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Advanced Integration Technology for a Highly Scalable SOI DRAM with SOC (Silicon-On-Capacitors)

Kim, I. K. et al.

INSTITUTE OF ELECTRICAL & ELECTRONIC ENGINEERS, INC (IEEE) Part: Part; (pages 605-608) -- 1996

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Results 1 - 10 of 11  for Everything in this catalogue

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