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Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

Solid State Electronics, November 2011, Vol.65-66, pp.123-129 [Peer Reviewed Journal]

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Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

Solid State Electronics, 2011, Vol.59(1), pp.50-61 [Peer Reviewed Journal]

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3
Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers
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Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers

Solid-State Electronics, 2010 Oct, Vol.54(10), pp.1066-1070 [Peer Reviewed Journal]

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Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
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Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

Solid-State Electronics, 2007 Apr, Vol.51(4), pp.572-578 [Peer Reviewed Journal]

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Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor

Solid State Electronics, 2001, Vol.45(7), pp.1099-1105 [Peer Reviewed Journal]

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Modeling of direct tunneling for thin SiO 2 film on n-type Si(1 0 0) by WKB method considering the quantum effect in the accumulation layer

Solid State Electronics, 2002, Vol.46(4), pp.577-579 [Peer Reviewed Journal]

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7
Nonclassical devices in SOI: Genuine or copyright from III-V
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Nonclassical devices in SOI: Genuine or copyright from III-V

Solid-State Electronics, 2007 Feb, Vol.51(2), pp.212-218 [Peer Reviewed Journal]

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8
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials
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Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Solid-State Electronics, 2008 Sep, Vol.52(9), pp.1329-1335 [Peer Reviewed Journal]

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