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Microstructural Evolution of a Commercial 0.04%C Steel during Batch Annealing

Millan, J. C. et al.

Materials science forum. VOL 509, ; 2006, 17-24 -- Transtec Publications; 1999 (pages 17-24) -- 2006

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An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors

Brezeanu, G. Badila, M. Godignon, P. Millan, J. Udrea, F. Mihaila, A. Amaratunga, G.; Yoshida, S.

Materials science forum.; International conference on silicon carbide and related materials; Tsukuba, Japan, 2001; Oct, 2002, 1301-1304 -- Trans Tech Publications; 2002 Part: Part 2; (pages 1301-1304) -- 2002

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Microstructural Evolution of a Commercial 0.04%C Steel during Batch Annealing

Millan, J. C. et al.

Materials science forum.; Advanced structural materials symposium; Advanced structural materials II; Cancun, Mexico, 2004; Aug, 2006, 17-24 -- Uetikon-Zuerich; [United Kingdom]; Trans Tech Publications; 2006 (pages 17-24) -- 2006

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2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. et al.

Materials science forum.; Silicon carbide and related materials 2009: selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 /; Nurnberg, Germany, 2009; Oct, 2010, 1207-1210 -- Stafa-Zurich, Switzerland; United Kingdom; Trans Tech Publications; c2010 (pages 1207-1210) -- 2010

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Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications

Tournier, D. et al.

Materials science forum. VOL 527/529; PART 2, ; 2006, 1243-1246 -- Transtec Publications; 1999 (pages 1243-1246) -- 2006

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Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

Alfieri, G. et al.

Materials science forum -- Trans Tech Publications -- Volume: 858 (pages 308-311) -- 2016

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Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta~2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion

Perez-Tomas, A. et al.

Materials science forum. VOL 527/529; PART 2, ; 2006, 1059-1062 -- Transtec Publications; 1999 (pages 1059-1062) -- 2006

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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, M.J. et al.

Materials science forum.; Silicon carbide and related materials; Silicon carbide and related materials 2012; selected, peer reviewed papers from the 9th European conference on silicon carbide and related materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation; edited by Alexnder A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein; St. Petersburg, Russia, 2012; Sep, 2013, 553-556 -- Durnten-Zurich, Switzerland; Trans Tech Publications Ltd; 2013 Part; (pages 553-556) -- 2013

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Iron Oxide and Oxide-Hydroxide Nanoparticles in Organic-Inorganic Matrices

Silva, N. J. O. et al.

Materials science forum. VOL 514/516; PART 1, ; 2006, 142-146 -- Transtec Publications; 1999 (pages 142-146) -- 2006

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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, M.J. et al.

Materials science forum. VOL 740/742, ; 2013, 553-556 -- Transtec Publications; 1999 Part; (pages 553-556) -- 2013

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Results 1 - 10 of 11  for Everything in this catalogue

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