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Point Defects Investigation of High Energy Proton Irradiated SiC p^+-i-n Diodes

Alfieri, G. et al.

Materials science forum -- Trans Tech Publications -- Volume: 897 (pages 246-249) -- 2017

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Improved 4H-SiC N-MOSFET Interface Passivation by Combining N~2O Oxidation with Boron Diffusion

Cabello, M. et al.

Materials science forum -- Trans Tech Publications -- Volume: 897 (pages 352-355) -- 2017

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Implementation of a Numerical Model to Define a Bending Manufacturing Process

Feito, N. et al.

Materials science forum -- Trans Tech Publications -- Volume: 853 (pages 36-41) -- 2016

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Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

Cabello, M. et al.

Materials science forum -- Trans Tech Publications -- Volume: 858 (pages 655-658) -- 2016

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Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Banu, V. et al.

Materials science forum -- Trans Tech Publications -- Volume: 858 (pages 1053-1056) -- 2016

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Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

Alfieri, G. et al.

Materials science forum -- Trans Tech Publications -- Volume: 858 (pages 308-311) -- 2016

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7
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Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue

Florentin, M.|Alexandru, M.|Constant, A.|Michel, P.|Montserrat, J.|Millan, J.|Godignon, P.

materials science forum -- Trans Tech -- Volume: 821/823 (pages 667-672) -- 2015

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Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Florentin, M. et al.

Materials science forum.; Silicon carbide and related materials 2013: selected, peer reviewed papers from the 15th international conference on silicon carbide and related materials (ICSCRM 2013), September 29-October 4, 2013, Miyazaki, Japan /; Miyazaki, Japan, 2013; Sep, 2014, 525-528 -- Durnten-Zurich, Switzerland; Trans Tech Publications Ltd; [2014] Part 1; (pages 525-528) -- 2014

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Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications

Bartolf, H. et al.

Materials science forum.; Silicon carbide and related materials 2013: selected, peer reviewed papers from the 15th international conference on silicon carbide and related materials (ICSCRM 2013), September 29-October 4, 2013, Miyazaki, Japan /; Miyazaki, Japan, 2013; Sep, 2014, 795-799 -- Durnten-Zurich, Switzerland; Trans Tech Publications Ltd; [2014] Part 2; (pages 795-799) -- 2014

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Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

Banu, V. et al.

Materials science forum.; Silicon carbide and related materials 2013: selected, peer reviewed papers from the 15th international conference on silicon carbide and related materials (ICSCRM 2013), September 29-October 4, 2013, Miyazaki, Japan /; Miyazaki, Japan, 2013; Sep, 2014, 891-894 -- Durnten-Zurich, Switzerland; Trans Tech Publications Ltd; [2014] Part 2; (pages 891-894) -- 2014

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by this Author/Contributor:

  1. Millan, J.
  2. Godignon, P.
  3. Vellvehi, M.
  4. Banu, V.
  5. Alexandru, M.

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