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Highly efficient polymer phosphorescent light emitting devices

Lee, C.-L. Lee, K. B. Kim, J.-J.

Materials science and engineering. B, Solid-state materials for advanced technology.; Asia Pacific symposium of organic electroluminescent materials and devices; Hong Kong, 2000, 2001, 228-231 -- Elsevier; 2001 (pages 228-231) -- 2001

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Highly efficient polymer phosphorescent light emitting devices

Lee, C. L. Lee, K. B. Kim, J. J.

Materials science and engineering. B, Solid-state materials for advanced technology. VOL 85; NUMBER 2-3, ; 2001, 228 - 231 -- Elsevier; 1999 -- 2001

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Orbital and charge orderings and magnetism in perovskite-type transition-metal oxides

Terakura, K. Lee, J. Yu, J. Solovyev, I. V. Sawada, H.; Tokura, Y.

Materials science and engineering. B, Solid-state materials for advanced technology.; NEC symposium on fundamental approaches to new material phases: phase control in spin-charge-orbital complex systems; Nasu, Japan, 1998; Oct, 1999, 11-16 -- Elsevier; 1999 (pages 11-16) -- 1999

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Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes

Joo, M. H. Lee, K. H. Song, J. H. Im, S.; Weber, J.

Materials science and engineering. B, Solid-state materials for advanced technology.; Process induced defects in semiconductors; Strasbourg, France, 1999; Jun, 2000, 224-228 -- Elsevier; 2000 (pages 224-228) -- 2000

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Laser wavelength and partial pressure effects on the formation of nanocrystalline Si

Kim, J. H. Jeon, K. A. Choi, J. B. Lee, S. Y.; Nozaki, S.

Materials science and engineering. B, Solid-state materials for advanced technology.; EMRS 2002; Micro- and nano-structured semiconductors; Strasbourg, France, 2002; Jun, 2003, 146-149 -- Elsevier; 2003 (pages 146-149) -- 2003

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GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Lee, C.-T. Shyu, K.-C. Lin, I.-J. Lin, H.-H.; Henini, M.

Materials science and engineering. B, Solid-state materials for advanced technology.; Low dimensional structures and devices; Antalya, Turkey, 1999; Sep, 2000, 147-150 -- Elsevier; 2000 (pages 147-150) -- 2000

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Photoluminescence from Si ion irradiated SiO~2/Si/SiO~2 films with elevated substrate temperature

Kim, H. B. Son, J. H. Chae, K. H. Jeong, J. Y. Lee, W. S. Im, S.; Song, J. H. Whang, C. N.; Nassiopoulou, A.

Materials science and engineering. B, Solid-state materials for advanced technology.; Microcrystalline and nanocrystalline semiconductors; Strasbourg, France, 1999; Jun, 2000, 401-405 -- Elsevier; 2000 (pages 401-405) -- 2000

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Thermoelectric properties of p-type Te doped Bi0.5Sb1.5Te3 fabricated by powder extrusion

Park, K. Seo, J. H. Cho, D. C. Choi, B. H. Lee, C. H.

Materials science and engineering. B, Solid-state materials for advanced technology. VOL 88; NUMBER 1, ; 2002, 103 - 106 -- Elsevier; 1999 -- 2002

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Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure

Chen, C.-C. Hsieh, K.-L. Sheu, J.-K. Chi, G.-C. Jou, M.-J. Lee, C.-H.

Materials science and engineering. B, Solid-state materials for advanced technology.; Group III nitrides; Strasbourg, France, 2001, 2002, 28-30 -- Elsevier; 2002 (pages 28-30) -- 2002

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Characteristics of GaN films grown on the stress-imposed Si(111)

Koh, E. K. Park, Y. J. Kim, E. K. Park, C. S. Lee, S. H. Lee, J. H. Choh, S. H.

Materials science and engineering. B, Solid-state materials for advanced technology. VOL 77; NUMBER 3, ; 2000, 268 - 273 -- Elsevier; 1999 -- 2000

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