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Refined by: journal title: Journal of physics. Condensed matter remove
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Magnetoresistance and Hall effect of NbSi~2 single crystals

Gottlieb, U. Laborde, O. Madar, R.

Journal of physics. Condensed matter. VOL 14; PART 29, ; 2002, 7007-7016 -- IOP PUBLISHING LTD (pages 7007-7016) -- 2002

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Defects in sublimation-grown SiC bulk crystals

Madar, R. Pernot, E. Anikin, M. Pons, M.

Journal of physics. Condensed matter. VOL 14; PART 48, ; 2002, 13009-13018 -- IOP PUBLISHING LTD (pages 13009-13018) -- 2002

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Defects in sublimation-grown SiC bulk crystals

Madar, R. Pernot, E. Anikin, M. Pons, M.; Pizzini, S.

Journal of physics. Condensed matter.; Extended defects in semiconductors; Bologna, Italy, 2002; Jun, 2002, 13009-13018 -- Institute of Physics; 2002 (pages 13009-13018) -- 2002

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The coexistence of two phases with ordered and disordered vacancies in PrGe~1~.~6

Lambert-Andron, B. et al.

Journal of physics. Condensed matter. VOL 6; NUMBER 42, ; 1994, 8725 -- IOP PUBLISHING LTD Part: Part 42; -- 1994

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Magnetic susceptibilities of VSi~2, NbSi~2 and TaSi~2 single crystals

Gottlieb, U. et al.

Journal of physics. Condensed matter. VOL 5; NUMBER 46, ; 1993, 8755 -- IOP PUBLISHING LTD Part: Part 46; -- 1993

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Contribution of numerical simulation to silicon carbide bulk growth and epitaxy

Meziere, J. et al.

Journal of physics. Condensed matter. VOL 16; PART 17, ; 2004, S1579-S1596 -- IOP PUBLISHING LTD (pages S1579-S1596) -- 2004

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by this Author/Contributor:

  1. Madar, R.
  2. Madar, R. Pernot, E. Anikin, M. Pons, M.
  3. Lambert-Andron, B.
  4. Gottlieb, U. Laborde, O. Madar, R.
  5. Dedulle, J.-M.

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