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Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN

Reddy, K. J.; Reddy, V. R.; Reddy, P. N.

Journal of materials science. Materials in electronics. VOL 19; NUMBER 4, ; 2008, 333-338 -- Springer Science + Business Media Part: Part 4; (pages 333-338) -- 2008

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Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure

Ashok Kumar, A.; Janardhanam, V.; Rajagopal Reddy, V.

Journal of materials science. Materials in electronics. VOL 22; NUMBER 7, ; 2011, 854-861 -- Springer Science + Business Media -- 2011

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Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface

Jyothi, I.; Rajagopal Reddy, V.; Choi, C. J.

Journal of materials science. Materials in electronics. VOL 22; NUMBER 3, ; 2011, 286-291 -- Springer Science + Business Media -- 2011

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Perspectives on SnSe-based thin film solar cells: a comprehensive review

Minnam Reddy, V. R. et al.

Journal of materials science. Materials in electronics. VOL 27; NUMBER 6, ; 2016, 5491-5508 -- Springer Science + Business Media Part 6; (pages 5491-5508) -- 2016

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Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN

Ramesh, C. K.; Reddy, V. R.; Rao, K. S.

Journal of materials science. Materials in electronics. VOL 17; NUMBER 12, ; 2006, 999-1004 -- Springer Science + Business Media (pages 999-1004) -- 2006

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Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices

Bhuvaneswari, H. B.; Reddy, V. R.; Rao, G. M.

Journal of materials science. Materials in electronics. VOL 17; NUMBER 5, ; 2006, 335-339 -- Springer Science + Business Media (pages 335-339) -- 2006

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Thermal annealing behaviour on Schottky barrier parameters and structural properties of Au contacts to n-type GaN

Reddy, K. J.; Reddy, V. R.; Reddy, P. N.

Journal of materials science. Materials in electronics.; International conference on materials for microelectronics and nanoengineering MFMN; Cranfield, 2006; Oct, 2008, 333-338 -- Springer; 2008 (pages 333-338) -- 2008

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Investigation on deep level defects in rapid thermal annealed undoped n-type InP

Janardhanam, V. et al.

Journal of materials science. Materials in electronics. VOL 21; NUMBER 3, ; 2010, 285-290 -- Springer Science + Business Media (pages 285-290) -- 2010

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Surface modification and enhanced multiferroic behavior of BiFe0.25Cr0.75O3 films with different thickness over Pt(111)/Ti/SiO2/Si substrate

William, R. V. et al.

Journal of materials science. Materials in electronics. VOL 29; NUMBER 6, ; 2018, 4457-4465 -- Springer Science + Business Media

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Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN

Rajagopal Reddy, V. et al.

Journal of materials science. Materials in electronics. VOL 25; NUMBER 5, ; 2014, 2379-2386 -- Springer Science + Business Media Part 5; (pages 2379-2386) -- 2014

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  1. Reddy, V. R.
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  3. Choi, C. J.
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  5. Shim, J.

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