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Refined by: journal title: IEEE transactions on nuclear science remove
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Charge Collection Efficiency Measurements for Segmented Silicon Detectors Irradiatedto 1 x 10^1^6 n cm^-^2

Casse, G.; Affolder, A.; Allport, P.P.

IEEE transactions on nuclear science. VOL 55; NUMB 3; PART 3, ; 2008, 1695-1699 -- IEEE; 1999 Part: 3; (pages 1695-1699) -- 2008

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Charge Collection Efficiency Measurements of Heavily Irradiated Segmented n-in-p and p-in-n Silicon Detectors for Use at the Super-LHC

Affolder, A.; Allport, P.; Casse, G.

IEEE transactions on nuclear science.; Radiation measurements and applications; Berkeley, CA, 2008; Jun, 2009, 765-770 -- IEEE; 2009 Part 3; (pages 765-770) -- 2009

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Charge Collection Efficiency Measurements of Heavily Irradiated Segmented n-in-p and p-in-n Silicon Detectors for Use at the Super-LHC

Affolder, A.; Allport, P.; Casse, G.

IEEE transactions on nuclear science. VOL 56; NUMB 3; PART 2, ; 2009, 765-770 -- IEEE; 1999 Part 3; (pages 765-770) -- 2009

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Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to 2 x 10^1^6 n~e~q cm^-^2

Casse, G. et al.

IEEE transactions on nuclear science. VOL 56; NUMB 2; PART 2, ; 2009, 3752-3758 -- IEEE; 1999 Part: 2; (pages 3752-3758) -- 2009

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Effects of Varying Substrate Thickness on the Collected Charge From Highly Irradiated Planar Silicon Detectors

Affolder, A. et al.

IEEE transactions on nuclear science. VOL 58; NUMBER 6, ; 2011, 3384-3391 -- IEEE; 1999 Part: Part 6; (pages 3384-3391) -- 2011

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Annealing at Different Temperatures of Silicon Microstrip Detectors After Severe Hadron Irradiation

Casse, G. et al.

IEEE transactions on nuclear science. VOL 59; NUMB 2, ; 2012, 419-424 -- IEEE; 1999 Part: Part 2; (pages 419-424) -- 2012

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by this Author/Contributor:

  1. Casse, G.
  2. Affolder, A.
  3. Allport, P.
  4. Allport, P.P.
  5. Wormald, M.

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