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5 results  for Everything in this catalogue

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Influence of Al Preflow Time on Surface Morphology and Quality of AlN and GaN on Si (111) Grown by MOCVD*Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400200.

Liu 刘, Bo-Ting 波亭 et al.

Chinese physics letters. Volume 34:Number 5 (2017, May) -- Chinese Physical Society

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High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer*Supported by the National Key R&D Program of China under Grant No 2016YFB0400200.

Liu 刘, Bo-Ting 波亭 et al.

Chinese physics letters. Volume 34:Number 4 (2017, April) -- Chinese Physical Society

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Effect of Nanorod Diameters on Optical Properties of GaN-Based Dual-Color Nanorod Arrays *Supported by the National Natural Science Foundation of China under Grant Nos 61505197 and 61334009, and the National Science and Technology Major Project under Grant No 2017YFB0403803.

Feng 冯, Liang-Sen 梁森 et al.

Chinese physics letters. Volume 36:Number 2 (2019) -- Chinese Physical Society

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Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes*Supported by the National Natural Science Foundation of China under Grant Nos 61505197 and 61334009, and the National High-Technology Research and Development Program of China under Grant No 2014AA032604.

Zhang 张, Ning 宁 et al.

Chinese physics letters. Volume 33:Number 11 (2016, November) -- Chinese Physical Society

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5 results  for Everything in this catalogue

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