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Refined by: journal title: Advanced materials remove
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Nanowires: Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature (Adv. Mater. 48/2014)

Guo, Nan et al.

Advanced materials. Volume 26:Number 48 (2014, October 30th); pp 8232-8232 -- Wiley-VCH

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Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature

Guo, Nan et al.

Advanced materials. Volume 26:Number 48 (2014, October 30th); pp 8203-8209 -- Wiley-VCH

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Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors

Zou, Xuming et al.

Advanced materials. Volume 26:Number 36 (2014, August 7th); pp 6255-6261 -- Wiley-VCH

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Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High‐Performance 2D Field Effect Transistors

Zou, Xuming et al.

Advanced materials. Volume 28:Issue 10 (2016); pp 2062-2069 -- Wiley-VCH

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Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet

Wong, Ping Kwan Johnny et al.

Advanced materials. Volume 31:Issue 23 (2019); pp n/a-n/a -- Wiley-VCH

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Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet

Wong, Ping Kwan Johnny et al.

Advanced materials. Volume 31:Number 23 (2019, June); pp n/a-n/a -- Wiley-VCH

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6 results  for Everything in this catalogue

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