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Cryogenic investigations and modelling of inter-defect charge exchange in silicon particle detectors

MacEvoy, B. C. Hall, G. Santocchia, A.; Watts, S.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms.; Defect engineering of advanced semiconductor devices; Strasbourg, France, 2001; Jun, 2002, 138-143 -- Elsevier; 2002 (pages 138-143) -- 2002

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The Use of a Variety of Synchrotron Techniques in the Study of Cementitious Materials

Barnes, P. Colston, S. L. Jupe, A. C. Jacques, S. D. M. Attfield, M. Bailey, S. P. Pisula, R. Hall, C. Livesey, P.; Allen, P. G.

Materials Research Society symposia proceedings.; Application of synchrotron radiation techniques to material science; San Francisco, CA, 2001; Apr, 2001, EE5.4 -- MRS; 2001 -- 2001

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Current Status of SiC Power Switching Devices: Diodes and GTOs

Seshadri, S. et al.

Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 23-32 -- Warrendale, PA; Materials Research Society; 1999 (pages 23-32) -- 1999

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An enhanced approach to numerical modeling of heavily irradiated silicon devices

Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G. M. MacEvoy, B. C. Hall, G. Placidi, P.; Watts, S.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms.; Defect engineering of advanced semiconductor devices; Strasbourg, France, 2001; Jun, 2002, 171-175 -- Elsevier; 2002 (pages 171-175) -- 2002

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Experimental and Theoretical Analysis of the Hall-Mobility in n-Type Bulk 6H- and 4H-SiC

Mueller, S. G. et al.

Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 275-280 -- Warrendale, PA; Materials Research Society; 1999 (pages 275-280) -- 1999

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Hall-Petch Hardening in Pulsed Laser Deposited Nickel and Copper Thin Films

Knapp, J. A. Follsteadt, D. M. Banks, J. C. Myers, S. M.; Vinci, R.

Materials Research Society symposia proceedings.; Thin films: stresses and mechanical properties; Boston, MA, 1999; Nov, 2000, 69-74 -- Materials Research Society; 2000 (pages 69-74) -- 2000

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Mobility Characterization of p-Type and n-Type Strained Si~1~-~x~-~yGe~xC~y/Si Epilayer Hall Devices

Peterson, J. J. et al.

Materials Research Society symposia proceedings.; III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics; Boston; MA, 1998; Nov, 1999, 293-298 -- Warrendale, PA; Materials Research Society; 1999 (pages 293-298) -- 1999

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Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes

Goetz, W. Kern, R. S. Chen, C. H. Liu, H.; Hangleiter, A.

Materials science and engineering. B, Solid-state materials for advanced technology.; Nitrides and related wide band gap materials; Strasbourg; France, 1998; Jun, 1999, 211-217 -- Elsevier; 1999 (pages 211-217) -- 1999

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8 results  for Everything in this catalogue

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