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Implementation of OFDM Modem Using Radix-N Pipeline FFT Processor

Oh, J. Cha, J. Lim, M.

Business Center for Academic Societies; 1998 (pages 374-375)

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2
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A New High Radiance LED Structure with Circular 45^o Corner Reflector

Park, E.-H. Cha, J.-H. Kwon, Y.-S.

Business Center for Academic Societies; 1998 (pages 90-91)

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Novel FFT LSI for OFDM Using Current Mode Circuit

Kim, S.-K. Cha, J.-S. Nakase, H. Tsubouchi, K.

Business Center for Academic Societies; 1998 (pages 384-385)

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15:45 F-1-6 InP/InGaAs/InP Double Hetero-junction Solar Cells with Increased Open-Circuit Voltage

Kim, C. Y. et al.

Business Center for Academic Societies; 1998 (pages 90-91)

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5
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16:00 H-10-3 Integration of a HEMT and a MSM PD Using an InGaAsP(Lambda = 1.3 mum) Buffer

Cha, J. H. et al.

Business Center for Academic Societies; 1998 (pages 942-943)

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6
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Fabrication of InGaAsP/InP Twin-Guide Laser Diode with Rectangular Ring Cavity

Jeon, S. K. Kim, B. J. Kim, M. J. Cha, J. H. Kim, J. H. Kwon, Y. S.

Business Center for Academic Societies; 1998 Part: Part; (pages 604-605)

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7
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The development of 2D materials for electrochemical energy applications: A mechanistic approach

Hynek, David J.; Pondick, Joshua V.; Cha, Judy J.

APL materials. Volume 7:Number 3(2019) -- AIP Publishing LLC

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8
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A New Contactless Battery Charger for Portable Telecommunication/Computing Electronics

Choi, B. Cha, H. Noh, J. Park, S.

IEEE; 1999 (pages 58-61)

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9
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Synthesis and superconductivity of In-doped SnTe nanostructures

Kumaravadivel, Piranavan et al.

APL materials. Volume 5:Number 7(2017) -- AIP Publishing LLC

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10
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11.4 Nanoelectromechanical DRAM for Ultra-Large-Scale Integration (ULSI)

Jang, J. E. et al.

IEEE; 1998 (pages 269-272)

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  1. Cha, J.  (719)
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