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Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

Journal of Crystal Growth, Apr. 2007, Vol.301-302, pp.731-734 [Peer Reviewed Journal]

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The Kondo effect observed up to TK80 K in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

Journal of Crystal Growth, 15 Mar. 2009, Vol.311(7), pp.1795-1798 [Peer Reviewed Journal]

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  1. Sakaki, H  (1)
  2. Ishida, S  (1)
  3. Jung, M.  (1)
  4. Arakawa, Y  (1)
  5. Machida, T  (1)
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by this Author/Contributor:

  1. Hirakawa, K
  2. Shibata, K.
  3. Sakaki, H
  4. Ishida, S
  5. Jung, M.

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