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Overview of nanoelectronic devices
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Overview of nanoelectronic devices

Proceedings Of The Ieee, 1997 Apr, Vol.85(4), pp.521-540 [Peer Reviewed Journal]

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Impact of Quantum Confinement on Gate Threshold Voltage and Subthreshold Swings in Double-Gate Tunnel FETs

IEEE Transactions on Electron Devices, December 2012, Vol.59(12), pp.3205-3211 [Peer Reviewed Journal]

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A Low-Power 40-Gb/s 1:2 Demultiplexer IC Based on a Resonant Tunneling Diode

IEEE Transactions on Nanotechnology, May 2012, Vol.11(3), pp.431-434 [Peer Reviewed Journal]

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A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors

IEEE Electron Device Letters, October 2012, Vol.33(10), pp.1342-1344 [Peer Reviewed Journal]

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Dynamics of First and Second Switches in Bi Sr CaCu O Intrinsic Josephson Junction Stacks Measured by Specifically Designed Electronics

IEEE Transactions on Applied Superconductivity, June 2017, Vol.27(4), pp.1-5 [Peer Reviewed Journal]

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Theory of dynamical control of qubit decay and decoherence

IEEE Transactions on Nanotechnology, January 2005, Vol.4(1), pp.116-123 [Peer Reviewed Journal]

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A Novel High-Speed Multiplexing IC Based on Resonant Tunneling Diodes

IEEE Transactions on Nanotechnology, July 2009, Vol.8(4), pp.482-486 [Peer Reviewed Journal]

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Impact of the High Vertical Electric Field on Low-Frequency Noise in Thin-Gate Oxide MOSFETs

IEEE Transactions on Electron Devices, December 2003, Vol.50(12), pp.2520-2527 [Peer Reviewed Journal]

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A Quantum-Mechanical View on the Capacitance of a Silicon p-n Junction

IEEE Electron Device Letters, April 2007, Vol.28(4), pp.312-314 [Peer Reviewed Journal]

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Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

IEEE Transactions on Electron Devices, July 2002, Vol.49(7), pp.1232-1241 [Peer Reviewed Journal]

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by this Author/Contributor:

  1. Padilla, J.L.
  2. Padilla, Jl
  3. Gamiz, F
  4. Alper, Cem
  5. Verhulst, A. S.

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