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35.5 Novel Transition Layer Engineered Si Nanocrystal Flash Memory with MHSOS Structure Featuring Large V~t~h Window and Fast P/E Speed

Joo, K.-H. et al.

Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 885-888 -- Institute of Electrical and Electronics Engineers; 2005 (pages 885-888)

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35.5 Novel Transition Layer Engineered Si Nanocrystal Flash Memory with MHSOS Structure Featuring Large V~t~h Window and Fast P/E Speed

Joo, K.-H. et al.

IEEE; 1998 (pages 885-888)

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by this Author/Contributor:

  1. Yoo, I.-K.
  2. Lim, S. H.
  3. Han, J. H.
  4. Lee, J.-W.
  5. Joo, K. H.

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  1. electron devices
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  3. IEEE

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