skip to main content
Show Results with:

Results 1 - 10 of 44  for Everything in this catalogue

results 1 2 3 4 5 next page
Refined by: author: Janardhanam, V. remove
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Material Type:
Article
Add to My workspace

Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure

Ashok Kumar, A.; Janardhanam, V.; Rajagopal Reddy, V.

Journal of materials science. Materials in electronics. VOL 22; NUMBER 7, ; 2011, 854-861 -- Springer Science + Business Media -- 2011

Online access

2
Material Type:
Article
Add to My workspace

Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction

Rajagopal Reddy, V. et al.

Elsevier -- 2017

Online access

3
Material Type:
Article
Add to My workspace

Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer

Jyothi, I. et al.

Superlattices and microstructures. Volume 75: (2014, November); pp 806-817 -- Elsevier

Online access

4
Material Type:
Article
Add to My workspace

Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

Sri Silpa, D. et al.

Indian journal of physics VOL 90; NUMBER 4, ; 2016, 399-406 -- Springer Science + Business Media Part 4; (pages 399-406) -- 2016

Online access

5
Material Type:
Article
Add to My workspace

Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction

Rajagopal Reddy, V. et al.

Journal of colloid and interface science. Volume 499 (2017); pp 180-188 -- Elsevier

Online access

6
Material Type:
Article
Add to My workspace

Influence of rapid thermal annealing on electrical and structural properties of double metal structure Au/Ni/n-InP (111) diodes

Bhaskar Reddy, M. et al.

Current applied physics : physics, chemistry and materials science : the official journal of the Korean Physical Society. VOL 10; NUMBER 2, ; 2010, 687-692 -- Elsevier Science B.V., Amsterdam. (pages 687-692) -- 2010

Online access

7
Material Type:
Article
Add to My workspace

Rapid thermal annealing effects on electrical and structural properties of Pd/Au Schottky contacts to n-type InP(111)

Reddy, M. B. et al.

Physica status solidi. A, Applications and materials science. VOL 206; NUMBER 2, ; 2009, 250-255 -- John Wiley & Sons, Ltd (pages 250-255) -- 2009

Online access

8
Material Type:
Article
Add to My workspace

Current-voltage-temperature (I-V-T) characteristics of Pd/Au Schottky contacts on n-InP (111)

Bhaskar Reddy, M. et al.

Current applied physics : physics, chemistry and materials science : the official journal of the Korean Physical Society. VOL 9; NUMBER 5, ; 2009, 972-977 -- Elsevier Science B.V., Amsterdam. Part 5; (pages 972-977) -- 2009

Online access

9
Material Type:
Article
Add to My workspace

Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer

Manjunath, V. et al.

Current applied physics: physics, chemistry and materials science. Volume 17:Number 7(2017); 201707; 980-988 -- Elsevier B.V.

Online access

10
Material Type:
Article
Add to My workspace

Investigation on deep level defects in rapid thermal annealed undoped n-type InP

Janardhanam, V. et al.

Journal of materials science. Materials in electronics. VOL 21; NUMBER 3, ; 2010, 285-290 -- Springer Science + Business Media (pages 285-290) -- 2010

Online access

Results 1 - 10 of 44  for Everything in this catalogue

results 1 2 3 4 5 next page

Refine Search Results

Refine my results

Access Options 

  1. Purchase a copy  (39)
  2. Online: Reading Room only  (23)
  3. Request to Reading Room  (19)
  4. Refine further open sub menu

Creation date 

From To
  1. Before2010  (7)
  2. 2010To2011  (5)
  3. 2012To2013  (6)
  4. 2014To2016  (14)
  5. After 2016  (12)
  6. Refine further open sub menu

Additional Features 

  1. Abstract  (38)
  2. No Abstract  (6)
  3. Refine further open sub menu

Searching Remote Databases, Please Wait