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High-k properties of atomic-layer-deposited HfO~2 films using a nitrogen-containing Hf[N(CH~3)~2]~4 precursor and H~2O oxidant

Cho, M. et al.

Applied physics letters. VOL 83; PART 26, ; 2003, 5503-5505 -- AMERICAN INSTITUTE OF PHYSICS (pages 5503-5505) -- 2003

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Thermal annealing effects on the structural and electrical properties of HfO~2/Al~2O~3 gate dielectric stacks grown by atomic layer deposition on Si substrates

Cho, M. et al.

Journal of applied physics. VOL 94; PART 4, ; 2003, 2563-2571 -- AMERICAN INSTITUTE OF PHYSICS (pages 2563-2571) -- 2003

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Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO~2 gate dielectrics

Park, J. et al.

Applied physics letters. VOL 85; NUMB 24, ; 2004, 5965-5967 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 24; (pages 5965-5967) -- 2004

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Comparison of HfO~2 films grown by atomic layer deposition using HfCl~4 and H~2O or O~3 as the oxidant

Park, H. B. et al.

Journal of applied physics. VOL 94; PART 5, ; 2003, 3641-3647 -- AMERICAN INSTITUTE OF PHYSICS (pages 3641-3647) -- 2003

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Comparison between atomic-layer-deposited HfO~2 films using O~3 or H~2O oxidant and Hf[N(CH~3)~2]~4 precursor

Cho, M. et al.

Applied physics letters. VOL 85; NUMB 24, ; 2004, 5953-5955 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 24; (pages 5953-5955) -- 2004

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5 results  for Everything in this catalogue

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  1. Lee, S. W.  (4)
  2. Jeong, J.  (3)
  3. Jang, G. H.  (2)
  4. Park, T. J.  (2)
  5. Jeong, D. S.  (2)
  6. Lee, J. C.  (2)
  7. Lee, N.-I.  (1)
  8. Hong, S. H.  (1)
  9. Lee, C  (1)
  10. Oh, S. J.  (1)
  11. Lee, J. H.  (1)
  12. Kang, H. S.  (1)
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by this Author/Contributor:

  1. Hwang, C.‐S.
  2. Cho, M
  3. Park, H. B.
  4. Park, J
  5. Lee, S. W.

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